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Lineshape Analysis of Intersubband Transitions in Multiple Quantum Wells

Published online by Cambridge University Press:  15 February 2011

G. Gumbs
G. Gumbs*
Affiliation:
Department of Physics and Astronomy, Hunter College, City University of New York, 695 Park Avenue, New York, NY 10021
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Abstract

Conduction intersubband transitions between the ground and first excited states in Al0.3Ga0.7As/GaAs multiple quantum wells (MQWs) are studied as a function of the twodimensional electron gas density (0.75 × 1012 ≤ σ ≤ 3.75 × 1012 cm−2) and temperature (5 ≤ T ≤ 300 K). There is no electron tunneling between the wells and well regions are uniformly doped with silicon donors. Theoretically, we have solved the Schrödinger equation containing the self-consistent Hartree potential, in which the z-dependencies of both electron effective mass and dielectric constant, as well as the non-parabolicity in the conduction energy subband dispersion have been taken into consideration. By applying many-body theory which includes the depolarization-shift from a collective dipole moment and the excitonicshift from the negative exchange interaction, we calculate the absorption spectrum as a function of the incident photon energy hw for different values of T and σ. From this, we can quantitatively analyze both T- and σ-dependencies of the peak position and the full width at half-maximum (FWHM) of peak values. The blue-shift or red-shift in the absorption peak position are quantitatively reproduced as either T or σ is reduced. The exchange interaction which depends on σ, will modify the energy subband dispersion. Therefore, the absorption peak will be broadened by the exchange interaction. The T-dependence of broadening from the optical-phonon scattering is also taken into account by a phenomenological model. From the calculated absorption spectrum as a function of o, we have successfully reproduced and explained the σ-dependence of FWHM measured in recent experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 265
Copyright
Copyright © Materials Research Society 1996

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References

1. Gumbs, G., Huang, D., Yin, Y., Qiang, H., Yan, D., Pollak, F. H., and Noble, T. F., Phys. Rev. B 48, 18328 (1993).Google Scholar
2. Gumbs, G., Huang, D., and Loehr, J. P., Phys. Rev. B 51, 4321 (1995).Google Scholar
3. Bandara, K., Coon, D. D., Byungsung, O., Lin, Y. F., and Francombe, M. H., Appl. Phys. Lett. 53, 1931 (1988).Google Scholar
4. Szmulowicz, F., Manasreh, M. O., Stutz, C. E., and Vaughan, T., Phys. Rev. B 50, 11618 (1994).Google Scholar
5. Manasreh, M. O., Szmulowicz, F., Vaughan, T., Evans, K. R., Stutz, C. E., and Fischer, D. W., Phys. Rev. 43, 9996 (1991); Appl. Phys. Lett. 57, 1790 (1990); M. O. Manasreh and J. P. Loehr in Semiconductor Quantum Wells and Superlattices for Long Wavelength Infrared Detection, (Artech, MA, 1993), ch. 2.Google Scholar
6. Załużny, M., Solid State Commun. 82, 565 (1992); M. Zażuiny, Phys. Rev. B43, 4511 (1991).Google Scholar
7. Mahan, G. D., Many-Particle Physics (Plenum, NY, 1981), ch. 5.Google Scholar
8. Bastard, G. and Brum, J. A., IEEE J. Quantum Electron. QE-22, 1625 (1986).Google Scholar
9. Gumbs, G., Huang, D., and Manasreh, M. O.,, Phys. Rev. B51, (November 15) (1995).Google Scholar
10. Esfarjani, K., Glyde, H. R., and Sa-yakanit, V., Phys. Rev. B 41, 1042 (1990).Google Scholar