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Light-Induced Degradation of Amorphous Silicon-Germanium Alloy Solar Cells Deposited at High Rates

Published online by Cambridge University Press:  10 February 2011

S. Sugiyama ,
X. Xu ,
J. Yang  and
S. Guha
S. Sugiyama
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, Michigan 48084
X. Xu
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, Michigan 48084
J. Yang
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, Michigan 48084
S. Guha
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, Michigan 48084
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Abstract

We have studied the light-induced degradation of amorphous silicon-germanium (a-SiGe:H) alloy single-junction solar cells with high initial performance deposited at high rates. The intrinsic layers were deposited using microwave (MW) glow-discharge technique at deposition rates between 10 and 40 Å/s. The results show that light-induced degradation of the cells is higher than that of cells deposited at low rates using RF glow-discharge technique, and it does not strongly depend on deposition rates over this range. The total hydrogen content and the ratio of Si-H2, Ge-H, and Ge-H2 to Si-H bonding estimated by infrared (IR) absorption in films are correlated with the cell degradation results. We have also investigated the effect of ionbombardment on film properties. Films with low ion-bombardment are more porous and have higher composition of Si-H2 and Ge-H2 bonding. Appropriate ion-bombardment makes denser structure in a-SiGe:H alloy films deposited at high rates. This improves the cell performance as well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 197
Copyright
Copyright © Materials Research Society 1996

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