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Light Wavelength Effects on Performance of a-Si:H PIN Photodiodes

Published online by Cambridge University Press:  10 May 2012

Shu-Hsien Wu ,
Yue Kuo  and
Chi-Chou Lin
Shu-Hsien Wu
Affiliation:
Thin Film Nano &Microelectronics Research Laboratory, Texas A&M University, College Station, TX, 77843-3122
Yue Kuo
Affiliation:
Thin Film Nano &Microelectronics Research Laboratory, Texas A&M University, College Station, TX, 77843-3122
Chi-Chou Lin
Affiliation:
Thin Film Nano &Microelectronics Research Laboratory, Texas A&M University, College Station, TX, 77843-3122
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Abstract

Light effects on the performance of the a-Si:H PIN photodiode has been studied. The leakage current-voltage and capacitance-voltage curves under the red, green and blue light illuminations were measured. The apparent charge storage density in the negative voltage range was quantified from the capacitance-voltage curve; charges in the positive voltage range were estimated from the leakage current-voltage curve. A comparison of charge storage capacities of diodes with different intrinsic layer thicknesses is also presented. The diode under the long wavelength light illumination condition stored more charges than that under the short wavelength light illumination condition because the former could penetrate the intrinsic a-Si:H layer deeper than the latter could. The leakage current and charge storage capacity of the diode are determined by the generation of electron-hole pairs, the depletion of charges in the intrinsic layer, and the supply of charges from the electrodes. The number of incident photons is critical to the process.

Keywords

devicesSioptoelectronic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1426: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2012 , 2012 , pp. 199 - 204
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

Morosanu, C., Cesile, C., Korepanov, S., Fiorini, P., Bacci, C., Meddi, F., Evangelisti, F., Mittiga, A., J. Non-Cryst. Solids, vol. 164-166, p. 801–804, 1993.CrossRefGoogle Scholar
LeComber, P. G., J. Non-Cryst. Solids, vol. 115, p. 1–13, 1989.CrossRefGoogle Scholar
Street, R.A., Weisfield, R.L., Apte, R.B., Ready, S.E., Moore, A., Nguyen, M., Thin Solid Films, vol. 296, p.172–176, 1997.CrossRefGoogle Scholar
Kanicki, J. (ed), “ Amorphous and Microcrystalline semiconductor devices”, vol. 2, p. 89, Artech House, Inc., Boston, 1992.Google Scholar
Antonuk, L.E., Yorkston, J., Huang, W., Boudry, J., Morton, E.J., Longo, M. J., Street, R.A., IEEE Trans. Nucl. Sci., vol. 39, p. 1069–1073, 1992.CrossRefGoogle Scholar
Antonuk, L. E., Zhao, Q., El-Mohri, Y., Du, H., Wang, Y., Street, R. A., Ho, J., Weisfield, R., Yao, W., Medical Physics, vol. 36, p. 3322–3337, 2009.CrossRefGoogle Scholar
Street, R. A., Antonuk, L. E., IEEE, vol. 9, p. 38–42, 1993.Google Scholar
Hack, M., Shur, M., J. Appl. Phys., vol. 58, p. 997–1020, 1985.CrossRefGoogle Scholar
Moloi, S. J., McPherson, M., Nucl. Instr. and Meth. A, vol. 632, p. 59–68, 2011.CrossRefGoogle Scholar
Cody, G. D., Wronski, C. R., Abeles, B., Stephens, R. B., Brooks, B., Solar Cells, vol. 2, p. 227–243, 1980.CrossRefGoogle Scholar
Grove, A. S., “Physics and Technology of Semiconductor Devices”, p. 189-190, John Wiley & Sons, Inc., New York, 1967.Google Scholar
Moll, J. L., Proc. IRE, vol. 46, p. 1076–1082, 1958.CrossRefGoogle Scholar
Tiedje, T., Wronski, C. R., Abeles, B., Cebulka, J. M., Solar Cells, vol. 2, p. 301–318, 1980.CrossRefGoogle Scholar
Tiedje, T., Wronski, C. R., Cebulka, J. M., J. Non-cryst. solids, vol. 35 & 36, p. 743–748, 1980.CrossRefGoogle Scholar
Hack, M., den Boer, W., J. Appl. Phys., vol. 58, p. 1554–1561, 1985.CrossRefGoogle Scholar
Kavasoglu, A.S., Kavasoglu, N., Oktik, S., Solid-State Electronics, vol. 53, p. 241–245, 2009.CrossRefGoogle Scholar
Casey, H. C., “Device for Integrated Circuit, Silicon and III-V Compound Semiconductors”, p. 192, John Wiley & Sons, Inc., New York, 1999.Google Scholar
Antonuk, L. E, Mohri, Y. E., Siewerdsen, J. H., Yorkston, J., Huang, W., Scaprpine, E., Street, R. A., Med. Phys., vol. 24, p. 51–70, 1996.CrossRefGoogle Scholar
Crandall, R. S., Williams, R., Tompkins, B. E., J. Appl. Phys., vol. 50, p. 5506–5509, 1979.CrossRefGoogle Scholar
Schünemann, K., Muller, J., IEEE Trans. Electron Device, vol. ED-23, p. 1150–1158, 1976.CrossRefGoogle Scholar
Hegedus, S. S., Prog. Photovolt. Res. Appl., vol. 5, p. 151–168, 1997.3.0.CO;2-W>CrossRefGoogle Scholar