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Life Testing and Reliability Behavior of Gan/Ingan/Aigan Light-Emitting Diodes

Published online by Cambridge University Press:  10 February 2011

M. Osinski
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque NM 7131-6081, USA, [email protected]
D. L. Barton
Affiliation:
Sandia National Laboratories, Albuquerque NM, 87185-1081, USA, [email protected]
C. J. Helms
Affiliation:
Sandia National Laboratories, Albuquerque NM, 87185-1081, USA, [email protected]
N. H. Berg
Affiliation:
Sandia National Laboratories, Albuquerque NM, 87185-1081, USA, [email protected]
C. H. Seager
Affiliation:
Sandia National Laboratories, Albuquerque NM, 87185-1081, USA, [email protected]
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Abstract

Our studies of device lifetime and the main degradation mechanisms in Nichia blue LEDs date back to Spring 1994. Following the initial studies of rapid failures under high current electrical pulses, where metal migration was identified as the cause of degradation, we have placed a number of Nichia NLPB-500 LEDs on a series of life tests. The first test ran for 1000 hours under normal operating conditions (20 mA at 23 °C). As no noticeable degradation was observed, the second room temperature test was performed with the same devices but with a range of currents between 20 and 70 mA. After 1600 hours, some degradation in output intensity was observed in devices driven at 60 and 70 mA, but it was still less than 20%. The subsequent tests included stepping up the temperature by 10 °C in 500 h intervals up to a final temperature of 95 °C using the same currents applied in the second test. This work reviews the failure analysis that was performed on the degraded devices and the degradation mechanisms that were identified.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

1. Helms, C. J., Berg, N. H., Barton, D. L., Phillips, B. S., and Osin'ski, M. in Fabrication, Testing, and Reliability of Semiconductor Lasers, edited by Fallahi, M. and Wang, S. C. (SPIE International Symposium on Lasers and Integrated Optoelectronics OE/LASE ′96, SPIE Proc. 2683, San Jose, CA, 1996) pp. 7480.10.1117/12.237678Google Scholar
2. Barton, D. L., Osin'ski, M., Perlin, P., Helms, C. J., and Berg, N. H., (Proceedings of 5th Annual IEEE International Reliability Physics Symposium, Denver, CO, 1997) pp. 276281.Google Scholar