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Layered Semiconductor Photoreflectance Diagnostics

Published online by Cambridge University Press:  22 February 2011

Konstantin.O. Boltar  and
Valery.A. Fedirko
Konstantin.O. Boltar
Affiliation:
Moscow State University of Technology “Stankin”, Vadkovski per.3a, 101472, Moscow, Russia
Valery.A. Fedirko
Affiliation:
Moscow State University of Technology “Stankin”, Vadkovski per.3a, 101472, Moscow, Russia
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Abstract

We have investigated IR reflectance spectra of semiconductor structures consisting of up to 5 epitaxial GaAs/GaAlAs layers on GaAs wafer, diffused and implanted profiles in Si wafers to find the semiconductor structures parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 175
Copyright
Copyright © Materials Research Society 1994

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References

1. Denisova, N.A., Kruse, T.A., Rezvov, A.B., Tetelbom, D.I., Mikroelektronika, 13 (4), 269, (1984).Google Scholar
2. Grosse, P., Trends in analytical chemistry, 8 (6), 222 (1989).Google Scholar
3. Born, M., Wolf, E., Principles of optics, (Pergamon Press, Oxford, 1968)Google Scholar
4. Seeger, K., Semiconductor physics, (Springer-Verlag, Wien - New-York, 1973).Google Scholar
5. Adachi, S., J. Appl. Phys., 58 (3), R1, (1985).Google Scholar