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Lattice Relaxation of Eras/Gaas: An X-Ray Scattering Study

Published online by Cambridge University Press:  25 February 2011

P. F. Miceli ,
K. W. Moyers  and
C. J. Palmstrøm
P. F. Miceli
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank, NJ 07701
K. W. Moyers
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank, NJ 07701
C. J. Palmstrøm
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank, NJ 07701
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Abstract

The results of a high resolution x-ray scattering study of [001]ErAs epitaxial layers grown on [001]GaAs is presented. ErAs is pseudomorphic on GaAs for thicknesses below 70Å and, for thicker films, lattice relaxation is oberved concomitant with an Increase of the In-plane mosaic due to the formation of misfit dislocations. Above 300Å, the out-of-plane transverse scattering from the ErAs lattice planes Is no longer specular and further relaxation Is related to the out-of-plane mosaic. The ratio of elastic constants, C12/C11, Is determined to be 0.126 and the thermal expansion was measured. Thin film Interference oscillations are observed and modeled. ErAs/GaAs Is an Ideal system for x-ray scattering studies of lattice relaxation and structure in epitaxial layers. Films as thin as 20Å have been studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 579
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Palmstrøm, C. J., Tabatabale, N. and Allen, S. J., Appl. Phys. Lett. 53. 2608 (1988).Google Scholar
2. Palmstrøm, C. J., Mounler, S., Flnstad, T. Q. and Miceli, P. F., Appl. Phys. Lett. 56, 382 (1990.Google Scholar
3. Richter, H. J., Smith, R. S., Herres, N., Seelmann-Eggebert, M. and Wennekers, P., Appl. Phys. Lett. 53, 99 (1988).Google Scholar
4. Le Corre, A., Caulet, J. and Gulvarc’h, A., Appl. Phys. Lett. 55, 2298 (1989).Google Scholar
Guivarc’h, A., Caulet, J. and Le Corre, A., Elect. Lett. 25, 1050 (1989).Google Scholar
5. Allen, S. J. Jr., Tabatabale, N., Palmstrøm, C. J., Hull, G. W., Sands, T., DeRosa, F., Gilchrist, H. L. and Garrison, K. C., Phys. Rev. Lett. 62, 2309 (1989).Google Scholar
Guivarc’h, A., Le Corre, A., Caulet, J., Guenals, B., Minier, M., Ropars, G., Badoz, P. A. and Duboz, J. Y., Mat. Res. Soc. Proc. 160, 331 (1990).Google Scholar
6. Zhu, J. G., Palmstrdm, C. J., Mounler, S. and Carter, C. B., Mat. Res. Soc. Proc. 160, 325 (1990).Google Scholar
7. Ralston, J. D., Ennen, H., Wennekers, P., Hiesinger, P., Herres, N., Schneider, J., Muller, H. D., Rothemund, W., Fuchs, F., Schmalzlln, J. and Thonke, K. J. Electr. Mat. 19, 555 (1990).Google Scholar
8. Palmstrdm, C. J., Garrison, K. C., Mounler, S., Sands, T., Schwartz, C. L., Tabatabaie, N., Allen, S. J. Jr., Gilchrist, H. L. and Miceli, P. F., J. Vac. Sci. Technol. B 7, 747 (1989).Google Scholar
9. Miceli, P. F., Palmstrøm, C. J. and Moyers, K. W., submitted.Google Scholar
10. Wilkens, B. J., Martinez, J. A., Mounler, S. and Palmstrøm, C. J., to be published.Google Scholar
11. Matthews, J. W. in “Epitaxial Growth” Part B, ed. Matthews, J. W. (Academic Press, New York, 1975).Google Scholar
12. Miceli, P. F. et. al., to be published.Google Scholar
13. Villars, P. and Calvert, L. D., in “Pearson’s Handbook of Crystallographlc Data for Intermetallic Phases” (American Society for Metals, Metals Park, OH, 1985).Google Scholar
14. Mullen, M. E., Luthi, B., Wang, P. S., Bucher, E., Longinotti, L. D. and Malta, J. P., Phys. Rev B 10, 186 (1974).Google Scholar
15. The model is similar to that used by Chrzan, D. and Dutta, P., J. Appl. Phys. 59, 1504 (1986) for the case of superlattlces. Details will be presented in ref. 12.Google Scholar
16. Majkrzak, C. F. and Felcher, G. P., MRS Bulletin 15 (11), 65 (1990).Google Scholar
Braslau, A., Deutsch, M., Pershan, P.S., Weiss, A. H., Als-Nlelsen, J. and Bohr, J., Phys. Rev. Lett. 54, 114 (1985).Google Scholar
Anastasiadis, S. H., Russel, T. P., Satija, S. K. and Majkrzak, C. F., Phys. Rev. Lett. 62, 1852 (1989).Google Scholar
Stroeve, P., Rabolt, J. F., Hilleke, R. O., Felcher, G. P. and Chen, S. H., Mat. Res. Soc. Proc. 166, 103 (1990).Google Scholar
17. Du, R. and Flynn, C. P., J. Phys. C 2, 1335 (1990).Google Scholar
Dodson, B. W., Myers, D. R., Datye, A. K., Kaushik, V. S., Kendall, D. L., and Martinez-Tovar, B., Phys. Rev. Lett. 61, 2681 (1988).Google Scholar