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Lattice Relaxation Effects in Si and GaAs Nanocrystals

Published online by Cambridge University Press:  28 February 2011

X. S. Zhao
Affiliation:
Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12180
Y. R. Ge
Affiliation:
Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12180
J. Schroeder
Affiliation:
Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12180
P. D. Persans
Affiliation:
Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

Raman scattering results on porous silicon, and silicon and gallium arsenide nanocrystals show that almost all vibrational modes become Raman active and remarkably soft in these nanocrystal systems. The experimental results further demonstrate that the carrier-induced strain effects play an important role on the optical properties of such nanocrystal systems.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1 Wilson, L., Szajowski, P. F. and Brus, L. E., Science 262, 1242 (1993)Google Scholar
2 Zhao, X.S., Persans, P.D., Schroeder, J. and Wu, Y.J., Mater. Res. Soc. Proc.,283,127 (1993)Google Scholar
3 Wu, Y. J., Zhao, X.S. and Persans, P.D., Mat. Res. Soc. Proc., 256, 69 (1992).Google Scholar
4 Zhao, X.S., Ge, Y.R., Schroeder, J. and Persans, P.D., Appl. Phys. Lett,65,2033 (1994)Google Scholar
5 Li, M.F., Zhao, X.S., Gu, Z.Q., Chen, J.X., Li, Y.J., and Wang, J.Q., Phys. Rev., B 43, 14040 (1991).Google Scholar
6 Balslev, I., Phys. Rev., 143, 636 (1966).Google Scholar
7 Xie, Y. H. et al. , Phys. Rev., B 49, 5386 (1994).Google Scholar
8 Cerdeira, F., Buchenauer, C. J., Pollak, F.H..and Cardona, M., Phys. Rev.,B 5,580 (1972).Google Scholar
9 Koch, P. V., Muschik, T., Kux, A., Meyer, B. K., Koch, F. and Lehmann, V., Appl. Phys. Lett., 61, 943 (1992).Google Scholar
10 Calcott, P. D.J., Nash, K.J., Canham, L.T., Kane, M.J..and Brumhead, D., J. Phys. Condens Matter,5,L91(1993)Google Scholar
11 Harris, C.I., Syvajarvi, M., Bergman, J.P., Kordina, O., Henry, A., Monemar, B., Appl. Phys. Lett., 65,2451 (1994).Google Scholar
12 Sturge, M. D. “The Jahn-Teller Effect in Solids” Solid State Phys., 20, 91 (1967).Google Scholar
13 Hirao, M., MRS boston 1994, this volume.Google Scholar
14 Chadi, D. J. and Martin, R. M., Solid State Commun., 19, 643 (1976).Google Scholar
15 Soma, T., Phys. Statu Solidi B 99, 701 (1980).Google Scholar
16 Eastman, D. E. and Freeout, J. L., Phys. Rev. Lett., 34, 1624 (1975).Google Scholar