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Lattice Relaxation Effects in Si and GaAs Nanocrystals
Published online by Cambridge University Press: 28 February 2011
Abstract
Raman scattering results on porous silicon, and silicon and gallium arsenide nanocrystals show that almost all vibrational modes become Raman active and remarkably soft in these nanocrystal systems. The experimental results further demonstrate that the carrier-induced strain effects play an important role on the optical properties of such nanocrystal systems.
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- Copyright © Materials Research Society 1995
References
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