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Lattice Mode Study of La2CuO4-y Implanted with Sr

Published online by Cambridge University Press:  26 February 2011

I. Ohana ,
G. L. Doll ,
A. Lusnikov ,
S. P. Withrow ,
P. J. Picone ,
M. S. Dresselhaus ,
G. Dresselhaus ,
H. P. Jenssen  and
D. R. Gabbe
I. Ohana
Affiliation:
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139
G. L. Doll
Affiliation:
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139
A. Lusnikov
Affiliation:
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139 Now at Department of Physics, U. of Nebraska at Omaha, Omaha, NB 68182-0266
S. P. Withrow
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
P. J. Picone
Affiliation:
Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
M. S. Dresselhaus
Affiliation:
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139
G. Dresselhaus
Affiliation:
National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, MA 02139
H. P. Jenssen
Affiliation:
Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
D. R. Gabbe
Affiliation:
Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Dramatic implantation-induced changes in the Raman and infrared spectra of polycrystalline samples of La2CuO4-y are reported for implantation of Sr in the fluence range 0.5 to 1.5 × 1016/cm2. The Raman and ir-reflectance spectra of the Sr implanted material reveal disorder-induced lines corresponding to breakdown of selection rules and to non-zone-center phonon modes. Whereas the main features in the Raman spectra of the implanted sample are broad disorder-induced lines centered at ∼ 560 ± 5 cm−1, reststrahlen lineshapes are observed above ∼ 800 cm−1 in the ir-reflectance spectra. After thermal annealing (550°C), the multiphonon lines in the ir spectra diminish, and the disorder-induced lines in the Raman spectra split to form well-resolved, sharper lines at 530 and 580 cm−1, identified with maxima in the phonon density of states. The sensitivity and complementarity of Raman and infrared spectroscopy to implantation-induced disorder and subsequent partial recovery by thermal annealing suggest that these techniques can be used to characterize sensitively disorder in ion implanted La2CuO4-y high Tc, materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 243
Copyright
Copyright © Materials Research Society 1988

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References

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