Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-02T22:08:29.118Z Has data issue: false hasContentIssue false
  • English
  • Français

Lattice constant variation in GaN:Si layers grown by HVPE

Published online by Cambridge University Press:  11 February 2011

A. Usikov ,
O. V. Kovalenkov ,
M. M. Mastro ,
D. V. Tsvetkov ,
A. I. Pechnikov ,
V. A. Soukhoveev ,
Y. V. Shapovalova  and
G. H. Gainer
A. Usikov
Affiliation:
Technologies and Devices International, Inc., 12214 Plum Orchard Dr., Silver Spring, MD 20904, USA
O. V. Kovalenkov
Affiliation:
Technologies and Devices International, Inc., 12214 Plum Orchard Dr., Silver Spring, MD 20904, USA
M. M. Mastro
Affiliation:
Technologies and Devices International, Inc., 12214 Plum Orchard Dr., Silver Spring, MD 20904, USA
D. V. Tsvetkov
Affiliation:
Technologies and Devices International, Inc., 12214 Plum Orchard Dr., Silver Spring, MD 20904, USA
A. I. Pechnikov
Affiliation:
Technologies and Devices International, Inc., 12214 Plum Orchard Dr., Silver Spring, MD 20904, USA
V. A. Soukhoveev
Affiliation:
Technologies and Devices International, Inc., 12214 Plum Orchard Dr., Silver Spring, MD 20904, USA
Y. V. Shapovalova
Affiliation:
Technologies and Devices International, Inc., 12214 Plum Orchard Dr., Silver Spring, MD 20904, USA
G. H. Gainer
Affiliation:
Technologies and Devices International, Inc., 12214 Plum Orchard Dr., Silver Spring, MD 20904, USA
Get access

Abstract

The structural, optical, and electrical properties of HVPE-grown GaN-on-sapphire templates were studied. The c and a lattice constants of the GaN layers were measured by x-ray diffraction. It was observed that the c and a lattice constants vary non-monotonically with Si-doping. The proper selection of Si-doping level and growth conditions resulted in controllable strain relaxation, and thus, influenced defect formation in GaN-on-sapphire templates. It was also observed that HVPE homoepitaxial GaN layers grown on the templates have better crystal quality and surface morphology than the initial templates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L3.41
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Weeks, T.W. Jr. Bremser, M.D., Ailey, K.S., Carlson, E., Perry, W.G., Davides, R.F., Appl. Phys. Lett., 67, 401 (1995).Google Scholar
2. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M., and Chocho, K., Jpn. J. Appl. Phys., 36, L1568 (1997).Google Scholar
3. Tojyo, T., Asano, T, Yanashima, K., Takeya, M., Hino, T., Kijuima, S., Ikeda, S.. IPAP Conf. Series 1, Proc. Int. Workshop on Nitride Semiconductors, Nagoya, 878 (2000).Google Scholar
4. Melnik, Yu., Tsvetkov, D., Davydov, A., Shapiro, A., Kovalenkov, O., Lam, J.B., Song, J.J. and Dmitriev, V., Phys. Stat. Sol. (a), 188, 429 (2001).Google Scholar
5. Valcheva, E., Paskova, T., Persson, P.O.A., Hultman, L. and Monemar, B., Appl. Phys. Lett., 80, 1550 (2002).Google Scholar
6. Sudhir, G.S., Peyrot, Y., Kruger, J., Kim, Y., Klockenbrink, R., Kisileowski, C., Rubin, M.D., and Weber, E.R, Kriegseis, W. and Meyer, B.K., Nitride Semiconductors, ed. Ponce, F.A., DenBaars, S.P., Meyer, B.K., Nakamura, S., Strite, S., Mater. Res. Soc. Proc. 482, 525 (1998).Google Scholar
7. Leszczynski, M., Teisseyre, H.. Suski, T., Gregory, I., Bockowski, M., Jun, J., Porowski, S., Pakula, K., Baranowski, J. M., Foxon, C. T., Cheng, T.S., Appl. Phys. Lett. 69, 73 (1996).Google Scholar