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Lateral Grain Growth in the Excimer Laser Crystallization ofPoly-Si

Published online by Cambridge University Press:  15 February 2011

H. Kuriyama ,
K. Sano ,
S. Ishida ,
T. Nohda ,
Y. Aya ,
T. Kuwahara ,
S. Noguchi ,
S. Kiyama ,
S. Tsuda  and
S. Nakano
H. Kuriyama
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573 Giant Electronics Technology Co., Ltd., 1-6-5 Higashinihonbashi, Chuo-ku, Tokyo 103
K. Sano
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573
S. Ishida
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573
T. Nohda
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573
Y. Aya
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573
T. Kuwahara
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573
S. Noguchi
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573
S. Kiyama
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573 Giant Electronics Technology Co., Ltd., 1-6-5 Higashinihonbashi, Chuo-ku, Tokyo 103
S. Tsuda
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573
S. Nakano
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573
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Abstract

We have succeeded in obtaining nondoped, thin poly-Si film (thickness ∼500Å)with excellent crystallinity and large grain size (Maximum grain size ∼4.5 μm) by an excimer laser annealing Method, which offers the features oflow-temperature processing and a short processing time. The grain sizedistribution shrinks in the region around 1.5 μ m and this poly-Si filmexhibits a strong (111) crystallographic orientation. Poly-Si thin filmtransistors using these films show quite a high field effect mobility of 440cm2/V · s below 600°C process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 657
Copyright
Copyright © Materials Research Society 1994

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References

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