Hostname: page-component-745bb68f8f-b6zl4 Total loading time: 0 Render date: 2025-01-12T09:17:33.328Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser-Annealed Gap Ohmic Contacts for High-Temperature Devices*

Published online by Cambridge University Press:  15 February 2011

O. Eknoyan ,
W. Van Der Hoeven ,
T. Richardson  and
W.A. Porter
O. Eknoyan
Affiliation:
Institute for Solid State Electronics, Texas A&M University, College Station, Tx.; J.A. COQUAT, Sandia Laboratories, Albuquerque, N.M.
W. Van Der Hoeven
Affiliation:
Institute for Solid State Electronics, Texas A&M University, College Station, Tx.; J.A. COQUAT, Sandia Laboratories, Albuquerque, N.M.
T. Richardson
Affiliation:
Institute for Solid State Electronics, Texas A&M University, College Station, Tx.; J.A. COQUAT, Sandia Laboratories, Albuquerque, N.M.
W.A. Porter
Affiliation:
Institute for Solid State Electronics, Texas A&M University, College Station, Tx.; J.A. COQUAT, Sandia Laboratories, Albuquerque, N.M.
Get access

Abstract

The results of successful Nd:YAG laser annealed ohmic contacts on n-type GaP are reported. Comparisons on identical laser and thermal annealed contacts on the same substrates are performed. In addition aging investigations are also studied. The results indicate that laser annealed contacts have far superior electrical characteristics, much better surface morphology and are substantially more stable with aging than the same but thermally alloyed ones.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 289
Copyright
Copyright © Materials Research Society 1981

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

This work was sponsored by Sandia Laboratories for the Division of Geothermal Energy, U.S. Department of Energy.

References

REFERENCES

1. Coquat, J. A., Palmer, D. W., Eknoyan, O. and van der Hoeven, W. B., IEEE/ECC Proc. No. 30, Semiconductor-Processing, 1980. p. 55.Google Scholar
2. Eknoyan, O., High Temperature Electronics and Instrumentation Seminar Proc., 1979, p. 129.Google Scholar
3. Chaffin, R. J., Sandia Report SAND80–1963, August 1980.Google Scholar
4. Eckhardt, G., Proc. of Laser and Electron Beam Processing of Materials, p. 467, Mat. Res. Soc. Meeting, 1979.Google Scholar
5. Barnes, P. A. and Cho, A. Y., Appl. Phys. Lett. 33, 651 (1978).Google Scholar
6. Tandon, J. L., Kilpatrick, C. G., Welch, B. M. and Fleming, P., Proc. of Laser and Electron Beam Processing of Materials, p. 487, Mat. Res. Soc. Meeting, 1979.Google Scholar
7. Pounds, R. S., Saifi, M. A. and Hahn, W. C. Jr, Solid-State Electron. 17, 245 (1974).Google Scholar
8. Cox, R. H. and Strack, H., Solid-State Electron. 10, 1213 (1967).CrossRefGoogle Scholar
9. Yu, A. Y. C., Solid-State Electron, 13, 239 (1970).Google Scholar
10. Burger, H. H., Solid-State Electron, 15, 145 (1972).CrossRefGoogle Scholar
11. Reeves, G. K., Solid-State Electron 23, 487 (1980).Google Scholar
12. Shih, K. K. and Blum, J. M., Solid-State Electron, 15, 1177 (1972).Google Scholar