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Laser Solid-Phase-Epitaxy of Amorphous Si1−xGex layer on Si

Published online by Cambridge University Press:  25 February 2011

Yasunori Sogoh ,
Kouicbi Murakami  and
Kohzoh Nasuda
Yasunori Sogoh
Affiliation:
Institute of Materials Science, University of Tsukuba Tsukuba Academic City, Ibaraki 305, Japan
Kouicbi Murakami
Affiliation:
Institute of Materials Science, University of Tsukuba Tsukuba Academic City, Ibaraki 305, Japan
Kohzoh Nasuda
Affiliation:
Institute of Materials Science, University of Tsukuba Tsukuba Academic City, Ibaraki 305, Japan
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Abstract

Laser Solid-phase-epitaxy (SPE) of amorphous Si1−xGex layer on Si formed by the molecular beam deposition (MBD) method was successfully performed by cw-Kr laser irradiation. Laser SPE of small areas was achieved by Laser irradiations of short time durations and high power densities The strain in the Laser-SPE layers was evaluated by micro-Raman scattering. It is demonstrated that strained SiGe layers on Si can be grown in the central area of 10μm size within the area crystallized by Laser- SPE at a substrate temperature of 400°C after preannealing at 350°C for 15 to 30 minutes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 731
Copyright
Copyright © Materials Research Society 1993

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