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Laser Processing of Silicon for Advanced Microelectronic Devices and Circuits*

Published online by Cambridge University Press:  15 February 2011

L.D. Hess ,
S.A. Kokorowski ,
G.L. Olson  and
G. Yaron
L.D. Hess
Affiliation:
Hughes Research Laboratories, Malibu, California, USA
S.A. Kokorowski
Affiliation:
Hughes Research Laboratories, Malibu, California, USA
G.L. Olson
Affiliation:
Hughes Research Laboratories, Malibu, California, USA
G. Yaron
Affiliation:
Currently with National Semiconductor, Santa Clara, California.
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Abstract

Some of the basic requirements currently envisioned for advanced microelectronic devices and circuits are outlined and discussed in terms of fabrication techniques. Phenomenological aspects of laser processing of semiconductor materials are presented and related to the potential application of this technology for overcoming some of the fundamental limitations of conventional fabrication methods. Laser processing results obtained from a variety of siliconbased materials and test structures are presented and used to illustrate the unique features of the laser technique and the novel approach it brings to semiconductor device and circuit fabrication.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 307
Copyright
Copyright © Materials Research Society 1981

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Footnotes

*

Supported in part by U.S. Army ERADCOM, Contract No. DAAK 20-80-C-0269.

References

REFERENCES

1. Hill, C., this proceedings.Google Scholar
2. Roth, J.A., Olson, G.L., Kokorowski, S.A. and Hess, L.D., this proceedings.Google Scholar
3. Gat, A., Gibbons, J.F., Magee, T.J., Peng, J., Deline, V.R., Williams, P. and Evans, C.A. Jr., Appl. Phys. Lett. 32, 276 (1978).Google Scholar
4. Kokorowski, S.A., Olson, G.L. and Hess, L.D., this proceedings.Google Scholar
5. Yaron, G., Hess, L.D. and Kokorowski, S.A., IEEE Trans. Electron Devices ED–27, 964 (1980).Google Scholar
6. Andrews, J.M., J. Electronic Materials 8, 227 (1979).Google Scholar
7. Yaron, G., Hess, L.D. and Olson, G.L., in “Laser and Electron Beam Processing of Materials,” White, C.W. and Peercy, P.S., Eds. New York, Academic Press, 1980, pp. 626–631.Google Scholar
8. Mayer, D.C. and Henderson, R.C., private communication.Google Scholar
9. Yaron, G. and Hess, L.D., IEEE Trans. Electron Devices ED–27, 573 (1980);Google Scholar
9a Yaron, G., Hess, L.D. and Kokorowski, S.A., Solid-State Electron. 23, 893 (1980).Google Scholar
10. Miller, G.L., in “Laser and Electron Beam Processing of Electronic Materials,” Anderson, C.L., Celler, G.K. and Rozgonyi, G.A., Eds., Princeton, New Jersey, The Electrochemical Society, Inc., 1980, pp. 83–107.Google Scholar
11. Geis, M.W., Flanders, D.C. and Smith, H.I., Appl. Phys. Lett. 35, 71 (1979);Google Scholar
11a Geis, M.W., Flanders, D.C., Smith, H.I. and Antoniadis, D.A., J. Vac. Sci. Technol. 16, 1640 (1979).CrossRefGoogle Scholar
12. Olson, G.L., Kokorowski, S.A., Roth, J.A. and Hess, L.D., this proceedings.Google Scholar