Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-02T22:32:39.930Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser Assisted Molecular Beam Deposition of Si, C and Sic Films

Published online by Cambridge University Press:  10 February 2011

R. L. DeLeon ,
L. Sun ,
E. Rexer ,
J. Charlebois ,
J. F. Garvey ,
E. W. Forsythe  and
G. S. Tompa
R. L. DeLeon
Affiliation:
Department of Chemistry, State University of New York at Buffalo, Buffalo, NY 14260
L. Sun
Affiliation:
Department of Chemistry, State University of New York at Buffalo, Buffalo, NY 14260
E. Rexer
Affiliation:
Department of Chemistry, State University of New York at Buffalo, Buffalo, NY 14260
J. Charlebois
Affiliation:
Department of Chemistry, State University of New York at Buffalo, Buffalo, NY 14260
J. F. Garvey
Affiliation:
Department of Chemistry, State University of New York at Buffalo, Buffalo, NY 14260
E. W. Forsythe
Affiliation:
Structured Materials Industries, Inc., 120 Centennial Ave., Piscataway, NJ 08854
G. S. Tompa
Affiliation:
Department of Chemistry, State University of New York at Buffalo, Buffalo, NY 14260
Get access

Abstract

Laser Assisted Molecular Beam Deposition (LAMBD) utilizes a train of gas pulses to precisely control the flux of species generated by laser ablation. We have used the LAMBD technique to ablate Si, C or SiC and grow films on a variety of substrates. These films were deposited as a function of a variety of source growth parameters. Source emission spectra of the Si ablation showed atomic Si and Si+; C ablation showed C atoms. Flux control was implemented by a variation of the laser pulse energy. Flux rates were determined by ablation target mass differences. The films have been analyzed by Raman scattering, SEM, EDX, FTIR, ESCA and surface profile measurements to determine the film structure and composition. These results demonstrate the potential of using LAMBD sources as a means of depositing a variety of high quality single and multiple component films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 573
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. See for example: Journal Vacuum Science and Technology, Molecular Beam Epitaxy Workshop Proceedings.Google Scholar
2. Grove, G. A., Physics and Technology of Semiconductor Devices, John Wiley & Sons, NY, NY, 1967.Google Scholar
3. Wijekoon, W. M. K. P., Prasad, P. N. and Garvey, J. F., SPIE Proceedings Laser Induced Thin Film Processing, 2403, p 143 (1995).Google Scholar
4. Wijekoon, W. M. K. P., Lyktey, M. Y. M., Prasad, P. N. and Garvey, J. F., Appl. Phys. Lett. 67, p 1698 (1995).Google Scholar
5. Herron, W. J. and Garvey, J. F., in Clusters and Cluster-Assembled Materials, edited by Averback, R. S., Bernholc, J. and Nelson, D. L. (Mater. Res. Soc. Proc. 206 Boston Ma, 1990) p 391.Google Scholar
6. Wijekoon, W. M. K. P., Lyktey, M. Y. M., Prasad, P. N. and Garvey, J. F., J. Appl. Phys. 74, p 5767 (1993).Google Scholar
7. DeLeon, R. L., Wijekoon, W. M. K. P., Narang, U., Hall, M. L., Prasad, P. N. and Garvey, J. F., submitted to J. Chem. Phys.Google Scholar
8. Christy, D. R. and Huber, G., Pulsed Laser Deposition of Thin Films, John Wiley & Sons, NY, NY, 1994.Google Scholar