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Laser Annealing of Ion Implanted Semiconductors*

Published online by Cambridge University Press:  15 February 2011

J. Narayan
J. Narayan*
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tn 37830
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Abstract

Photon energy from laser beams can be used to rapidly heat and melt localized regions of semiconductors with a high degree of spatial and temporal selectivity. Pulsed lasers have been successfully used to anneal displacement damage and to remove other defects. However, the number density of trapped defects increases with velocity of solidification and finally thin layers turn directly amorphous after laser-melt quenching. Annealing characteristics are found to be a strong function of ion implantation variables, which determine optical properties of materials. By both solid- and liquid-phase crystallization, supersaturated solid solutions can be formed. Residual defects in SPE grown layers primarily consist of dislocation loops. Device applications utilizing these transient thermal processing techniques are reviewed briefly.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 491
Copyright
Copyright © Materials Research Society 1982

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W–7405–eng–26 with Union Carbide Corporation.

References

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