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Large Grained, Low Defect Density Polycrystalline Silicon on Glass Substrates by Large-area Diode Laser Crystallisation

Published online by Cambridge University Press:  11 July 2012

Bonne Eggleston
Affiliation:
University of New South Wales, Kensington, NSW, Australia, 2052 Suntech R&D Australia Pty Ltd, 82 Bay St, Botany, NSW, 2019 Australia.
Sergey Varlamov
Affiliation:
University of New South Wales, Kensington, NSW, Australia, 2052
Jialiang Huang
Affiliation:
University of New South Wales, Kensington, NSW, Australia, 2052
Rhett Evans
Affiliation:
Suntech R&D Australia Pty Ltd, 82 Bay St, Botany, NSW, 2019 Australia.
Jonathon Dore
Affiliation:
University of New South Wales, Kensington, NSW, Australia, 2052 Suntech R&D Australia Pty Ltd, 82 Bay St, Botany, NSW, 2019 Australia.
Martin A. Green
Affiliation:
University of New South Wales, Kensington, NSW, Australia, 2052
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Abstract

A new method to form high quality crystalline silicon thin films on cheap glass substrates is developed using a single pass of a line-focus cw diode laser in air. The laser process results in the formation of large high-quality crystals as they grow laterally in the scan direction – seeded by the previously crystallised region. Grains 10 μm in thickness, up to millimetres in length and hundreds of microns in width have been grown with virtually zero detectable intragrain defects. Another mode is found which results in much smaller crystals grown by partial melting. The dominant grain boundaries identified are Σ3 <111> 60° twins. Hall mobilities as high as 470 cm2/Vs have been recorded. A diffused emitter is used to create a p-n junction at the rear of the films which produces open-circuit voltages as high as 539 mV.

Type
Articles
Copyright
Copyright © Materials Research Society 2012

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