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Large Grain Size and High Deposition Rate for Microcrystalline Silicon Prepared by VHF-GD

Published online by Cambridge University Press:  28 February 2011

P. Hapke ,
F. Finger ,
M. Luysberg ,
R. Carius  and
H. Wagner
P. Hapke
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany
F. Finger
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany
M. Luysberg
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany
R. Carius
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany
H. Wagner
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany
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Abstract

The growth mechanism and material properties of -type µc-Si:H prepared with plasma enhanced chemical vapour deposition in the very high frequency range is investigated. By increasing the plasma excitation frequency the grain size, deposition rate and Hall mobility can be simultaneously increased without having to adjust other deposition parameters in particular the temperature. This effect is explained by an enhanced selective etching of amorphous tissue and grain boundary regions together with a sufficient supply of growth species at high frequency plasmas.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 745
Copyright
Copyright © Materials Research Society 1995

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References

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