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Large Area Plasma Enhanced Chemical Vapor Deposition of Nonstoichiometric Silicon Nitride

Published online by Cambridge University Press:  22 February 2011

Yue Kuo
Yue Kuo*
Affiliation:
IBM Research Division, T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, N.Y. 10598USA
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Abstract

This paper presents results on PECVD of low refractive index silicon nitride in a large area system. Film deposition characteristics, suchas deposition rate and thickness uniformity, were investigated over awide range of process parameters, such as gas composition, power, pressure, and N2 pressure. Film properties, such as RI, absorbance, stress, and etch rate, have also been studied. A general model, which includes both the deposition and etching mechanisms, has been developed to explain these results. This model could explain the film uniformity issue in the process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 623
Copyright
Copyright © Materials Research Society 1993

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References

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