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Large Area Multi-wafer MOCVD of Transparent and Conducting ZnO Films

Published online by Cambridge University Press:  01 February 2011

Gary S. Tompa ,
S. Sun ,
L. G. Provost ,
Dan Mentel ,
D. Sugrim ,
Philip Chan ,
Keny Tong ,
Raymond Wong  and
A. Lee
Gary S. Tompa
Affiliation:
[email protected], Structured Materials Industries, Inc., R&D, 201 Circle Drive North, Unit 102/103, Piscataway, NJ, 08854, United States, 732-302-9274, 732-302-9275
S. Sun
Affiliation:
[email protected], Structured Materials Industries, Inc., 201 Circle Drive North, Unit 102/103, Piscataway, NJ, 08854, United States
L. G. Provost
Affiliation:
[email protected], Structured Materials Industries, Inc., 201 Circle Drive North, Unit 102/103, Piscataway, NJ, 08854, United States
Dan Mentel
Affiliation:
[email protected], Structured Materials Industries, Inc., 201 Circle Drive North, Unit 102/103, Piscataway, NJ, 08854, United States
D. Sugrim
Affiliation:
[email protected], Structured Materials Industries, Inc., 201 Circle Drive North, Unit 102/103, Piscataway, NJ, 08854, United States
Philip Chan
Affiliation:
[email protected], Podium Photonics, Ltd., Kowloon, N/A, Hong Kong
Keny Tong
Affiliation:
[email protected], Podium Photonics, Ltd., Kowloon, N/A, Hong Kong
Raymond Wong
Affiliation:
[email protected], Podium Photonics, Ltd., Kowloon, N/A, Hong Kong
A. Lee
Affiliation:
[email protected], Podium Photonics, Ltd., Kowloon, N/A, Hong Kong
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Abstract

ZnO thin films are of interest for an array of applications, including: light emitters, photovoltaics, sensors and transparent contacts, among others. Production routes for ZnO include sputtering, MBE and MOCVD. This paper focuses on our efforts to produce a large scale MOCVD thin film production tool and the results obtained from the reactor. Specifically, we have constructed a tool with a 16” wafer carrier that uniformly deposits ZnO films on 38×2” wafers simultaneously. The reactor operates at low pressure (<0.1 Atmosphere) and through 700°C. High quality, uniform films have been deposited on an array of substrates. Al-doped films exhibited resisitivities in the 1×10-3 ohm-cm range and transmissivity greater than 80%. Film morphology and crystallinity are a function of process parameters. The large area oxide MOCVD reactor design challenges and results are summarized. Tool performance and ZnO thin film quality are reviewed, as well as preliminary ZnO contact performance on GaN LEDs.

Keywords

chemical vapor deposition (CVD) (deposition)coatingII-VI
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K09-05
Copyright
Copyright © Materials Research Society 2007

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References

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