Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-02T18:55:22.540Z Has data issue: false hasContentIssue false
  • English
  • Français

Large Area Multi-wafer MOCVD of Transparent and Conducting ZnO Films

Published online by Cambridge University Press:  01 February 2011

Gary S. Tompa ,
S. Sun ,
L. G. Provost ,
Dan Mentel ,
D. Sugrim ,
Philip Chan ,
Keny Tong ,
Raymond Wong  and
A. Lee
Gary S. Tompa
Affiliation:
[email protected], Structured Materials Industries, Inc., R&D, 201 Circle Drive North, Unit 102/103, Piscataway, NJ, 08854, United States, 732-302-9274, 732-302-9275
S. Sun
Affiliation:
[email protected], Structured Materials Industries, Inc., 201 Circle Drive North, Unit 102/103, Piscataway, NJ, 08854, United States
L. G. Provost
Affiliation:
[email protected], Structured Materials Industries, Inc., 201 Circle Drive North, Unit 102/103, Piscataway, NJ, 08854, United States
Dan Mentel
Affiliation:
[email protected], Structured Materials Industries, Inc., 201 Circle Drive North, Unit 102/103, Piscataway, NJ, 08854, United States
D. Sugrim
Affiliation:
[email protected], Structured Materials Industries, Inc., 201 Circle Drive North, Unit 102/103, Piscataway, NJ, 08854, United States
Philip Chan
Affiliation:
[email protected], Podium Photonics, Ltd., Kowloon, N/A, Hong Kong
Keny Tong
Affiliation:
[email protected], Podium Photonics, Ltd., Kowloon, N/A, Hong Kong
Raymond Wong
Affiliation:
[email protected], Podium Photonics, Ltd., Kowloon, N/A, Hong Kong
A. Lee
Affiliation:
[email protected], Podium Photonics, Ltd., Kowloon, N/A, Hong Kong
Get access

Abstract

ZnO thin films are of interest for an array of applications, including: light emitters, photovoltaics, sensors and transparent contacts, among others. Production routes for ZnO include sputtering, MBE and MOCVD. This paper focuses on our efforts to produce a large scale MOCVD thin film production tool and the results obtained from the reactor. Specifically, we have constructed a tool with a 16” wafer carrier that uniformly deposits ZnO films on 38×2” wafers simultaneously. The reactor operates at low pressure (<0.1 Atmosphere) and through 700°C. High quality, uniform films have been deposited on an array of substrates. Al-doped films exhibited resisitivities in the 1×10-3 ohm-cm range and transmissivity greater than 80%. Film morphology and crystallinity are a function of process parameters. The large area oxide MOCVD reactor design challenges and results are summarized. Tool performance and ZnO thin film quality are reviewed, as well as preliminary ZnO contact performance on GaN LEDs.

Keywords

chemical vapor deposition (CVD) (deposition)coatingII-VI
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K09-05
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Strite, S., Morkoç, H., “GaN, AlN, and In N: A review”, Journal of Vacuum Science & Technology B, Vol. 10(4), p.1237 (1992).Google Scholar
2. Ponce, F.A. and Bour, D.P., “Nitride-based semiconductors for blue and green lightemitting devices”, Nature, Vol. 386, p. 351 (1997).Google Scholar
3. Denbaars, S.P., “Gallium-nitride-based materials for blue to ultraviolet optoelectronics devices”, Proceedings of the IEEE, Vol. 85(11), p. 1740 (1997).Google Scholar
4. Steigerwald, D.A., Bhat, J.C., Collins, D., Fletcher, R.M. and Holcomb, M.O., “Illumination With Solid State Lighting Technology”, IEEE Journal Selected Topics In Quantum Electronics, Vol. 8(2), p. 310 (2002).Google Scholar
5. Tsao, J.Y., “Solid State Lighting”, IEEE Circuits and Devices Magazine, p. 28, May/June (2004).Google Scholar
6. Steigerwald, D., Rudaz, S., Liu, H., Kern, R.S., Götz, W. and Fletcher, R., “III-V Nitride Semiconductors for High-Performance Blue and Green Light-Emitting Devices”, Journal of Metals, Vol. 49(9), p 18 (1997).Google Scholar
7. Unpublished work, Podium Photonics, Ltd.Google Scholar
8. Leem, D.S., Cho, J., Sone, C., Park, Y., and Seong, T.Y., “Light-output enhancement of GaN-based light-emitting diodes by using hole-patterned transparent indium tin oxide electrodes”, Journal of Applied Physics, Vol. 98(7), 076107 (2005).; J.H. Lim, E.J. Yang, D.K. Hwang, J.H. Yang, J.Y. Oh and S.J. Park, "Highly transparent and low resistance gallium-doped indium oxide contact to p-type GaN", Applied Physics Letters, Vol. 87(4) 042109 (2005).; J.O. Song, J.S. Kwak, Y. Park and T.Y. Seong, "Improvement of the light output of InGaN-based light-emitting diodes using Cu-doped indium oxide/indium tin oxide p-type electrodes", Applied Physics Letters, Volume 86(21) 213505 (2005). Tadatsugu Minami, Transparent conducting oxide semiconductors for transparent electrodes, Semicond. Sci. Technol. 20 (2005) S35-S44.Google Scholar
9. Forsythe, E. W., Gao, Y., and Tompa, G. S., J. Vacuum Sci. Technol. A17 (1999) 1761.Google Scholar
10. Tompa, G. S., Provost, L. G., and Cuchiaro, J. D., Proc. MRS Workshop on Transparent Conducting Oxides, June 2000.Google Scholar
11. “MOCVD Zinc Oxide Films For Wide Bandgap Applications”, Rice, C.E., Tompa, G.S., Provost, L.G., Sbrockey, N., Cuchiaro, J., Materials Research Society Symp. Proc. 764, C3.10.1 (2003).Google Scholar
12. “Metalorganic Chemical Vapor Deposition and Characterization of ZnO Materials”, Sun, S., Tompa, G., Hoerman, B., Look, D., Claflin, B., Rice, C. and Masaun, P., J. Electron. Materials, 35, 766 (2006).Google Scholar
13. “Filament support arrangement for substrate heating apparatus”, Tompa, G., priority of provisional patent filed February 11, 2006.Google Scholar
14. “Developing High-Efficiency Zn2SiO4:Mn Thin-Film Phosphors for Flat-Panel Cathodoluminescent Displays”, Liu, J., Morton, D. C., Miller, M. R., Li, Y., Forsythe, E. W., and Tompa, G. S., Mater. Res. Soc. Symp. Proc, pp. 305-311. (1997) and "High-Efficiency Zn2SiO4:Mn Thin-Film Phosphor for Flat-Panel FEDs", Liu, J. Morton, D. C. Miller, M. R. Krzykowski, P. F. Li, Y. Forsythe, E. W. Tompa, G. S. Bloomstein, T. M. Palmacci, S. T. Rothschild, M., SID INTERNATIONAL SYMPOSIUM DIGEST OF TECHNICAL PAPERS, 1997, VOL 28, pages 337-342.Google Scholar
15. “Self assembled controlled luminescent transparent Conductive Photonic Crystals for Light Devices”, Tompa, G. S., Sun, S., Rice, C. E., Sbrockey, N., and Provost, L. G., priority of provisional patent filed October 4, 2006.Google Scholar