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Kinetics and Mechanism of Formation of GaN from β-Ga2O3 by NH3

Published online by Cambridge University Press:  31 January 2011

Toshiki Sakai ,
Hajime Kiyono  and
Shiro Shimada
Toshiki Sakai
Affiliation:
[email protected], Hokkaido University, Sapporo, Japan
Hajime Kiyono
Affiliation:
[email protected], Hokkaido University, Sapporo, Japan
Shiro Shimada
Affiliation:
[email protected], Hokkaido University, Sapporo, Japan
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Abstract

Nitridation of β-Ga2O3 to GaN in an atmosphere of NH3/Ar was investigated from the view points of kinetic results by thermogravimetric analysis (TGA) and microstructural observation. TGA and X-ray powder diffraction results showed that the nitridation of Ga2O3 to GaN starts at about 650°C and decomposition of GaN formed occurs from 870°C. Isothermal TGA results showed that the nitridation proceeds linearly with time at 800 – 1000°C. Microstructural observation of the samples nitrided at 800°C showed that fine GaN particles (∼50 nm size) deposit on surfaces of Ga2O3 particles at an early stage, and the deposits grow with progress of the nitridation.

Keywords

nitridethermogravimetric analysis (TGA)kinetics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I05-10
Copyright
Copyright © Materials Research Society 2010

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