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JVD Silicon Nitride and Titanium Oxide as Advanced Gate Dielectrics
Published online by Cambridge University Press: 10 February 2011
Abstract
The principle and practice of the Jet-Vapor Deposition (JVD) technique for thin-film deposition will be introduced, followed by a presentation of the properties of ultra-thin JVD silicon nitride (designated SiN in this paper) as advanced MOS gate dielectric. Recent results on the JVD TiO2/SiN gate stack will also be presented
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- Research Article
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- Copyright © Materials Research Society 1999
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