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Ion/Neutral Beam Assisted Etching of Semiconductors: Chemical Modifications of the Adsorbed Phase

Published online by Cambridge University Press:  16 February 2011

Glenn. C. Tyrrell ,
Duncan Marshall  and
Richard B. Jackman
Glenn. C. Tyrrell
Affiliation:
Electronic and Electrical Engineering, University College London, Torrington Place, London, WCIE 7JE, UK
Duncan Marshall
Affiliation:
Electronic and Electrical Engineering, University College London, Torrington Place, London, WCIE 7JE, UK
Richard B. Jackman
Affiliation:
Electronic and Electrical Engineering, University College London, Torrington Place, London, WCIE 7JE, UK
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Abstract

This paper addresses the fundamental aspects of etching semiconductors with inert gas beams in the presence of a suitable precursor gas. In particular, the changes that an energetic bombarding ion/neutral species cause to the surface and sub-surface region of a solid are considered, both in terms of the introduction of damage to the semiconductor and chemical processes that are provoked in the adsorbed states present. The implications for practical etching reactions are then discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 61
Copyright
Copyright © Materials Research Society 1991

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References

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