Hostname: page-component-5cf477f64f-54txb Total loading time: 0 Render date: 2025-04-03T14:44:50.693Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion-Beam-Induced Damaging and Dynamic Annealing Processes in Silicon

Published online by Cambridge University Press:  25 February 2011

K.T. Short ,
D.J. Chivers ,
R.G. Elliman ,
J. Liu ,
A.P. Pogany ,
H. Wagenfeld  and
J.S. Williams
K.T. Short
Affiliation:
Microelectronics Technology Centre, RMIT Melbourne 3000, Australia
D.J. Chivers
Affiliation:
Microelectronics Technology Centre, RMIT Melbourne 3000, Australia
R.G. Elliman
Affiliation:
Microelectronics Technology Centre, RMIT Melbourne 3000, Australia Joint appointment with CSIRO Division of Chemical Physics, Clayton 3168, Australia
J. Liu
Affiliation:
Chinese Academy of Sciences, Beijing, China.
A.P. Pogany
Affiliation:
Microelectronics Technology Centre, RMIT Melbourne 3000, Australia
H. Wagenfeld
Affiliation:
Microelectronics Technology Centre, RMIT Melbourne 3000, Australia
J.S. Williams
Affiliation:
Microelectronics Technology Centre, RMIT Melbourne 3000, Australia
Get access

Abstract

We have employed high resolution ion channeling and TEM methods to investigate the damage production and dynamic annealing processes which take place in (100) silicon bombarded at elevated temperatures. Two important observations have arisen from our results i) We have observed an amorphisation process for Sb-implanted silicon at 250°C which is more akin to amorphisation processes in metals, whereby the impurity (Sb) appears to influence the stability of amorphous zones associated with individual ion tracks. ii) We have demonstrated that previously amorphised layers in silicon can be recrystallised through a solid phase epitaxial process by subsequent bombardment with He+, Ar+ and Sb+ ions at substrate temperatures of 300–400°C, which are significantly below normal thermal regrowth temperatures of >500°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 247
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Mayer, J.W., Eriksson, L. and Davies, J.S.: In “Ion Implantation in Semiconductors”. Academic Press N.Y. (1970).Google Scholar
2. Poate, J.M. and Williams, J.S.: In ”Ion Implantation and Beam Processing” Williams, J.S. and Poate, J.M. eds. Academic Press Sydney (1983).Google Scholar
3. Bubb, I.F., Chivers, D.J., Liu, J.R., Pogany, A.P., Short, K.T., Wagenfeld, H.K. and Williams, J.S.: Nucl. Inst. Meth., in press.Google Scholar
4. Csepregi, L., Kennedy, E.F., Lau, S.S., Mayer, J.W. and Sigmon, T.W.; Appl. Phys. Lett. 29, 645 (1976).Google Scholar
5. Beanland, D.G.; Rad. Effects 33, 219 (1977).Google Scholar
6. Svensson, B., Linnros, J. and Holmen, G.; Nucl. Inst. Meth., 210, 755 (1983).Google Scholar
7. Nakata, J. and Kajiyama, K.; Appl. Phys. Lett. 40, 686 (1982).Google Scholar
8. Csepregi, L., Kennedy, E.F., Gallagher, T.J., Mayer, J.W. and Sigmon, T.W.. J. Appl. Phys. 48, 4234, (1977).Google Scholar
9. Morehead, F.F. and Crowder, B.L.: In “Ion Implantation”, Eisen, F.H. and Chadderton, L.T. eds. Gordon and Breach London (1971).Google Scholar
10. Thompson, D.A., Rad. Effects 56, 105 (1981).Google Scholar
11. Christel, L.A. and Gibbons, J.F.: J. Appl. Phys. 52, 5050 (1981).Google Scholar
12. Grant, W.A.: J. Vac. Sci. 17, 1663 (1978).Google Scholar
13. Elliman, R.G., Johnson, S.T., Short, K.T. and Williams, J.S., these proceedings.Google Scholar