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Ion-Beam-Induced Damaging and Dynamic Annealing Processes in Silicon

Published online by Cambridge University Press:  25 February 2011

K.T. Short ,
D.J. Chivers ,
R.G. Elliman ,
J. Liu ,
A.P. Pogany ,
H. Wagenfeld  and
J.S. Williams
K.T. Short
Affiliation:
Microelectronics Technology Centre, RMIT Melbourne 3000, Australia
D.J. Chivers
Affiliation:
Microelectronics Technology Centre, RMIT Melbourne 3000, Australia
R.G. Elliman
Affiliation:
Microelectronics Technology Centre, RMIT Melbourne 3000, Australia Joint appointment with CSIRO Division of Chemical Physics, Clayton 3168, Australia
J. Liu
Affiliation:
Chinese Academy of Sciences, Beijing, China.
A.P. Pogany
Affiliation:
Microelectronics Technology Centre, RMIT Melbourne 3000, Australia
H. Wagenfeld
Affiliation:
Microelectronics Technology Centre, RMIT Melbourne 3000, Australia
J.S. Williams
Affiliation:
Microelectronics Technology Centre, RMIT Melbourne 3000, Australia
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Abstract

We have employed high resolution ion channeling and TEM methods to investigate the damage production and dynamic annealing processes which take place in (100) silicon bombarded at elevated temperatures. Two important observations have arisen from our results i) We have observed an amorphisation process for Sb-implanted silicon at 250°C which is more akin to amorphisation processes in metals, whereby the impurity (Sb) appears to influence the stability of amorphous zones associated with individual ion tracks. ii) We have demonstrated that previously amorphised layers in silicon can be recrystallised through a solid phase epitaxial process by subsequent bombardment with He+, Ar+ and Sb+ ions at substrate temperatures of 300–400°C, which are significantly below normal thermal regrowth temperatures of >500°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 247
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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