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Ion-Assisted Pulsed Laser Deposition of BN Films

Published online by Cambridge University Press:  21 February 2011

G. L. Doll ,
D. C. Chance  and
L. Salamanca-Riba
G. L. Doll
Affiliation:
General Motors Research & Development Center, Warren, Michigan 48090
D. C. Chance
Affiliation:
Physics Department, Wayne State University, Detroit, Michigan 48201
L. Salamanca-Riba
Affiliation:
University of Maryland, College Park, Maryland 20742 US
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Abstract

Boron nitride films grown by ion-assisted pulsed laser deposition have been characterized by infrared absorption, auger electron pectroscopy, and transmission electron microscopy. Elemental bonding and the crystallinity of BN films grown in three nitrogen ion energy regimes:high (2500 eV), low (700 eV), and without ions (0 eV) are examined, and the results interpreted within the framework of a compressive stress mechanism for cBN film growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 165
Copyright
Copyright © Materials Research Society 1995

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