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Ion Mixing of Near-Noble Transition Metal Films on Evaporated and Large-Grained Aluminum Substrates

Published online by Cambridge University Press:  25 February 2011

E. Ma ,
X.-A. Zhao  and
M-A. Nicolet
E. Ma
Affiliation:
California Institute of Technology, Pasadena, CA 91125
X.-A. Zhao
Affiliation:
California Institute of Technology, Pasadena, CA 91125
M-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, CA 91125
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Abstract

Ion mixing experiments using Xe ions at temperatures ranging from 77K to about 450K were conducted on Al/Ni and Al/Pt couples. Evaporated polycrystalline Al films and large-grained Al crystals were used as substrates. Xenon irradiation of Al/Pt bilayers achieves considerable intermixing and a temperature dependence is observed. Only moderate interfacial mixing with little temperature dependence is observed in Al/Ni bilayers. The mixing efficiency of Al/Ni is consistent with the phenomenological model of thermal spike mixing, and so is the absence of a pronounced temperature dependence below 450K. No significant difference is noted in ion mixing of evaporated and large-grained Al substrates. In contrast to ion mixing, Al/Pt and Al/Ni samples behave similarly upon thermal annealing and form well-defined compounds. The results are also compared with Si/metal systems, where silicides can be formed readily by low temperature thermal annealing as well as by ion mixing of bilayer samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 221
Copyright
Copyright © Materials Research Society 1987

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References

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