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ION Induced Crystallization and Amorphization of Silicon

Published online by Cambridge University Press:  21 February 2011

Kenneth A. Jackson
Kenneth A. Jackson*
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Extensive experimental investigations which have been reported on the ion-induced motion of the interface between the crystalline and amorphous phases of silicon are shown to fit a model based on a single defect. The model accounts for the temperature and flux dependence of the interface motion. The defects annihilate each other by binary recombination, and have a motion energy of 1.2 eV. The defect is believed to be the dangling bond in the amorphous phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 39
Copyright
Copyright © Materials Research Society 1989

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References

1. Linnros, J., Ph.D. Thesis,Chalmers University of Technology, Goteborg, Sweden (1985).Google Scholar
2. Williams, J. S., Elliman, R. G., Brown, W. L. and Seidel, T. E., Mat. Res. Soc. Symp. Proc. 37, 127 (1985).Google Scholar
3. Brown, W. L., Elliman, R. G., Knoell, R. V., Leiberich, A., Linnros, J., Maher, D. M., and Williams, J, S., Microscopy of Semiconductor Materials, Inst. of Phys. Conf. Series ed. by Cullis, A. G., 61 (1987).Google Scholar
4. Elliman, R. G., Williams, J. S., Brown, W. L., Leiberich, A., Maher, D. M., and Knoell, R. V., Nucl. Inst. & Methods, B19/20, 435 (1987).Google Scholar
5. Leiberich, A., Maher, D. M., Knoell, R. V. and Brown, W. L., Nucl. Inst. & Methods, B19/20, 457 (1987).Google Scholar
6. Linnros, J., Brown, W. L., and Elliman, R. G., Mat. Res. Soc. Symp. Proc., 100 (1988) 369.Google Scholar
7. Biersack, J. P. and Haggmark, L. J., Nucl. Inst. & Methods 174, 257 (1980).Google Scholar
8. Csepregi, , Chu, W. K., Muller, H., Mayer, J. W. and Sigmon, T. W., Radiat. Eff. 28, 277 (1976).Google Scholar
9. Jackson, K. A., J. Mater. Res. 3 (1988) 1218.Google Scholar