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Ion Implanted Dielectric Films for an Improved Optical and Electronic Silicon Photovoltaic Response

Published online by Cambridge University Press:  03 January 2013

Avi Shalav
Affiliation:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200, Australia School of Engineering, College of Engineering and Computer Science, Australian National University, ACT 0200, Australia
Christian Henderson
Affiliation:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200, Australia School of Engineering, College of Engineering and Computer Science, Australian National University, ACT 0200, Australia
Tom Ratcliff
Affiliation:
School of Engineering, College of Engineering and Computer Science, Australian National University, ACT 0200, Australia
Andrew Thomson
Affiliation:
School of Engineering, College of Engineering and Computer Science, Australian National University, ACT 0200, Australia
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Abstract

Over the past few years, ion implanters specifically developed for the high throughput required by the silicon photovoltaic industry, have become commercially available. Recent research and development has focused on the formation of doped surface regions, particularly the formation of selective emitters. In this study we explore two effects of ion implantation into a thermal silicon dioxide passivating/antireflection dielectric. We show evidence that the electronic and optical performance of the layer can be improved via the incorporation of charges created within the dielectric film and the creation of a graded refractive index, minimizing the surface recombination and reflection losses respectively.

Type
Articles
Copyright
Copyright © Materials Research Society 2012 

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