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Ion Implantation of High Doses of Co in Si1−xGex Alloys

Published online by Cambridge University Press:  28 February 2011

A. Lauwers ,
K. Maex ,
W. Vandervorst ,
G. Brijs ,
J. Poortmans ,
M. Caymax ,
J. Vanhellemont  and
S. Petersson
A. Lauwers
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.), Kapeldreef75, 3001 Leuven, Belgium.
K. Maex
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.), Kapeldreef75, 3001 Leuven, Belgium.
W. Vandervorst
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.), Kapeldreef75, 3001 Leuven, Belgium.
G. Brijs
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.), Kapeldreef75, 3001 Leuven, Belgium.
J. Poortmans
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.), Kapeldreef75, 3001 Leuven, Belgium.
M. Caymax
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.), Kapeldreef75, 3001 Leuven, Belgium.
J. Vanhellemont
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.), Kapeldreef75, 3001 Leuven, Belgium.
S. Petersson
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.), Kapeldreef75, 3001 Leuven, Belgium.
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Abstract

The implantation of high doses of Co in Si1−xGex alloys is investigated for several Ge concentrations. The aim of this work is to monitor phase formation, layer formation and crystalline structure of the layers. The samples are evaluated by RBS, SIMS, TEM and sheet resistance measurements. Similar as for the implantation of high doses of Co in Si, buried layer formation of CoSi2 in the Si1−x Gex alloy is observed with a concommitant expulsion of Ge out of the silicide layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 299
Copyright
Copyright © Materials Research Society 1992

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References

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