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Ion Implantation and Annealing of Oxides

Published online by Cambridge University Press:  28 February 2011

C. W. White ,
L. A. Boatner ,
P. S. Sklad ,
C. J. Mchargue ,
S. J. Pennycook ,
M. J. Aziz ,
G. C. Farlow  and
J. Rankin
C. W. White
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
L. A. Boatner
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
P. S. Sklad
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
C. J. Mchargue
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
S. J. Pennycook
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
M. J. Aziz
Affiliation:
Harvard University, Cambridge, MA 02138
G. C. Farlow
Affiliation:
Wright State University, Dayton, OH 45435
J. Rankin
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Ion implantation damage and annealing results are presented for a number of crystalline oxides. In A12 O3, the amorphous phase produced by ion bombardment of the pure material first crystallizes in the (crystalline) γ phase. This is followed by the transformation of γ-Al2 O3 to α-A12O3 at a well defined interface. The activation energy for the growth of α alumina from γ is 3.6 eV/atom. In CaTiO3, the implantation-induced amorphous phase transforms to the crystalline phase by solid-phase epitaxy (SPE). ZnO is observed to remain crystalline even after high implantation doses at liquid nitrogen temperatures. The near surface of KTaO3 is transformed to a polycrystalline state after implantation at room temperature or liquid nitrogen temperature.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 357
Copyright
Copyright © Materials Research Society 1987

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References

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