Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-03T08:36:18.402Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion Beam Surface Modification for Achieving Rectification in Gold-Aluminum Nitride-Silicon Junctions

Published online by Cambridge University Press:  22 February 2011

T. Stacy ,
B. Y. Liaw ,
A. H. Khan ,
G. Zhao ,
E. M. Charlson ,
E. J. Charlson ,
J. M. Meese ,
M. Prelas ,
J. L. Wragg  and
J. E. Chamberlain
...Show all authors
T. Stacy
Affiliation:
College of Engineering, University of Missouri, Columbia, MO 65211
B. Y. Liaw
Affiliation:
College of Engineering, University of Missouri, Columbia, MO 65211
A. H. Khan
Affiliation:
College of Engineering, University of Missouri, Columbia, MO 65211
G. Zhao
Affiliation:
College of Engineering, University of Missouri, Columbia, MO 65211
E. M. Charlson
Affiliation:
College of Engineering, University of Missouri, Columbia, MO 65211
E. J. Charlson
Affiliation:
College of Engineering, University of Missouri, Columbia, MO 65211
J. M. Meese
Affiliation:
College of Engineering, University of Missouri, Columbia, MO 65211
M. Prelas
Affiliation:
College of Engineering, University of Missouri, Columbia, MO 65211
J. L. Wragg
Affiliation:
Physics Department, University of Missouri, Columbia, MO 65211
J. E. Chamberlain
Affiliation:
Physics Department, University of Missouri, Columbia, MO 65211
H. W. White
Affiliation:
Physics Department, University of Missouri, Columbia, MO 65211
Get access

Abstract

Low energy ion bombardment has been utilized to fabricate rectifying contacts on aluminum nitride grown on single crystal silicon substrates. Bombardment of aluminum nitride with methane was followed by sputter deposition of gold contacts. To our knowledge, this is the first report of rectifying contact formation on aluminum nitride. Scanning electron micrographs show that the initially ordered aluminum nitride surface is significantly altered with low energy methane ion beam exposure. Electrical measurements made on samples which had been partially masked during implantation indicate that rectification is a result of the ion bombardment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 355
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Morita, M., Tsubouchi, K., and Mikoshiba, N., Jpn J. Appl. Phys. 21, 728 (1982).Google Scholar
2 Mochizuki, Y., Mizuta, M., Fujiedam, S. and Matsumoto, Y., Appl. Phys. Lett. 55, 1318 (1989).Google Scholar
3 Liu, J. K., Lakin, K. M., and Wang, K. L., J. Appl. Phys. 46, 3703 (1975).Google Scholar
4 Yoshida, S., Misawa, S., Fujii, Y., Takada, S., Hayakawa, H., Gonda, S., and Itoh, A., J. Vac. Sci. and Technol. 16, 990 (1979).Google Scholar
5 Dupuie, J. L. and Gulari, E., J. Vac. Sci. and Technol. A10, 18 (1992), and references contained therein.Google Scholar
6 Khan, A. H., Odeh, M. F., Meese, J. M., Charlson, E. M., Charlson, E. J., Stacy, T., Popovici, G., Prelas, M., and Wragg, J., accepted, J. Mater. Sci. Google Scholar
7 Carlone, C., Lakin, K. M., Shanks, H. R., J. Appl. Phys. 55, 4010 (1984).Google Scholar
8 Morita, M., Uesugi, N., Isogai, S., Tsubouchi, K., and Mikoshiba, N., Jpn. J. Appl. Phys. 20, 17(1981).Google Scholar