Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-08T02:27:25.010Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion Beam Mixing of GaAs/AlGaAs Superlattice and ITS Relationship to Amorphization

Published online by Cambridge University Press:  21 February 2011

P. P. Pronko ,
A. W. McCormick ,
D. B. Patrizio ,
A. K. Rai ,
R. M. Kolbas  and
B. S. Frank
P. P. Pronko
Affiliation:
Universal Energy Systems, Inc., 4401 Dayton-Xenia Road, Dayton, OH 45432.
A. W. McCormick
Affiliation:
Universal Energy Systems, Inc., 4401 Dayton-Xenia Road, Dayton, OH 45432.
D. B. Patrizio
Affiliation:
Universal Energy Systems, Inc., 4401 Dayton-Xenia Road, Dayton, OH 45432.
A. K. Rai
Affiliation:
Universal Energy Systems, Inc., 4401 Dayton-Xenia Road, Dayton, OH 45432.
R. M. Kolbas
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University (NCSU), Raleigh, NC 27695–7911
B. S. Frank
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University (NCSU), Raleigh, NC 27695–7911
Get access

Abstract

This work is part of a study to understand the process by which energetic ion bombardment can be used to mix the chemical components of AlGaAs and GaAs superlattice (S/I.) layers of nominal 35 to 50Å thickness. Data reported here involve the retention and build-up of collision cascade damage in the S/I. and its relationship to amorphization and chemical mixing in these systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 297
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ralston, J., Wicks, G.W., Eastman, L.F., DeCooman, B.C. and Carter, C.B., J. Appl. Phys. 59, 120 (1986).Google Scholar
2. Deppe, D.G. and Holonyak, N. Jr., J. Appl. Phys. 64, R93 (1988) and references therein.Google Scholar
3. Laidig, W.D., Holonyak, N. Jr., Camras, M.D., Hess., K. Coleman, J.J., Dapkus, P.D. and Bardeen, J., Appl. Phys. Lett. 38, 776, (1981).Google Scholar
4. Meehan, K., Hsieh, K.C., Costrini, G., Kaliski, R.W., Holonyak, N. Jr., and Coleman, J.J., Appl. Phys. Lett. 48, 861 (1986).Google Scholar
5. Dobisz, E.A., Craighead, H.G., Schwarz, S.A., Lin, P.S.D., Kash, K., Schiuvone, L.M., Scherer, A. and Harbison, J.P., SPIE, Advanced Processing of Semiconductor Devices, 797, 194 (1987).Google Scholar
6. Lee, S. Tong, Braustein, G., Fellinger, P., Kahen, K.B. and Rajeswaran, G., Appl. Phys. Lett. 53, 2531 (1988).Google Scholar
7. Dobisz, E.A., Dietrich, H. and McCormick., A.W. These proceedings.Google Scholar
8. Pronko, P.P. et al. To be published.Google Scholar