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Ion Beam Deposition of Boron-Aluminum Nitride Thin Films

Published online by Cambridge University Press:  21 February 2011

J.H. Edgar ,
C.R. Eddy Jr. ,
J.A. Sprague  and
B.D. Sartwell
J.H. Edgar
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506-5102
C.R. Eddy Jr.
Affiliation:
Code 6671, Naval Research Laboratory, Washington, DC 20375-5345
J.A. Sprague
Affiliation:
Code 6671, Naval Research Laboratory, Washington, DC 20375-5345
B.D. Sartwell
Affiliation:
Code 6170, Navel Research Laboratory, Washington, DC 20375-5342
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Abstract

Analysis of the phase behavior, structure, and composition of aluminum nitride thin films with up to 22% boron prepared by ion-beam assisted deposition is presented. the c-lattice constant of the film decreased with increasing boron content as expected from the formation of an aIN - wurtzite BN alloy. there was no evidence for separate boron nitride precipitation from either X-ray diffraction or FTIR. IN contrast, auger electron spectroscopy of the boron present in the films suggested that two types of boron bonding was present.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 183
Copyright
Copyright © Materials Research Society 1995

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