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Ion Assisted ETP-CVD a-Si:H at Well Defined Ion Energies

Published online by Cambridge University Press:  31 January 2011

Michael A. Wank ,
René van Swaaij  and
M. van de Sanden
Michael A. Wank
Affiliation:
[email protected], Delft University of Technology, Electrical Energy Conversion Unit/DIMES, Delft, Netherlands
René van Swaaij
Affiliation:
[email protected], Delft University of Technology, Electrical Energy Conversion Unit/DIMES, Delft, Netherlands
M. van de Sanden
Affiliation:
[email protected], Eindhoven University of Technology, Department of Applied Physics, Eindhoven, Netherlands
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Abstract

Hydrogenated amorphous silicon (a-Si:H) was deposited with the Expanding Thermal Plasma-CVD (ETP CVD) method utilizing pulse-shaped substrate biasing to induce controlled ion bombardment during film growth. The films are analyzed with in-situ real time spectroscopic ellispometry, FTIR spectroscopy, as well as reflection-transmission and Fourier transform photocurrent spectroscopy (FTPS) measurements. The aim of this work is to investigate the effect ion bombardment with well defined energy on the roughness evolution of the film and the material properties.

We observe two separate energy regimes with material densification and relatively constant defect density below ˜ 120-130 eV and a constant material density at increasing defect density > 120-130 eV substrate bias. We discuss our results in terms of possible ion – surface atom interactions and relate our observations to reports in literature.

Keywords

Siamorphousplasma-enhanced CVD (PECVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1153: Symposium A – Amorphous and Polycrystalline Thin Film Silicon Science and Technology–2009 , 2009 , 1153-A17-06
Copyright
Copyright © Materials Research Society 2009

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References

[1] Sanden, M. C. M. van de, Severens, R. J. Kessels, W. M. M. Meulenbroeks, R. F. G. and Schram, D. C. J. Appl. Phys. 84 (1998), p. 2426.Google Scholar
[2] Smets, A. H. M. Kessels, W. M. M. and Sanden, M. C. M. van de, J. Appl. Phys. 102 (2007), p. 073523.Google Scholar
[3] Wang, S. B. and Wendt, A. E. J. Appl. Phys. 88 (2000), p. 643.Google Scholar
[4] Oever, P. J. van den, Sanden, M. C. M. van de and Kessels, W. M. M. J. Appl. Phys. 101 (2007), p. 10.Google Scholar
[5] Ma, Z. Q. Zheng, Y. F. and Liu, B. X. Phys. Status Solidi A-Appl. Res. 169 (1998), p. 239.Google Scholar
[6] Wittmaack, K. Phys. Rev. B 68 (2003), p. 11.Google Scholar
[7] Kaufman, H. R. and Harper, J. M. E. J. Vac. Sci. Technol. A 22 (2004), p. 221.Google Scholar
[8] Hamers, E. A. G. Sark, W. G. J. H. M. van, Bezemer, J. Meiling, H. and Weg, W. F. van der, J. Non-Cryst. Solids 226 (1998), p. 205.Google Scholar
[9] Harper, J. M. E. Cuomo, J. J. Gambino, R. J. and Kaufman, H. R. Ion Bombardment Modification of Surfaces: Fundamentals and Applications, Elsevier Science, Amsterdam (1984).Google Scholar