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Investigation On Laser-Induced Effects In Nanostructure Fabrication With Laser-Irradiated Scanning Tunneling Microscope Tips in Air Ambient

Published online by Cambridge University Press:  10 February 2011

Z. H. Mai
Affiliation:
Laser Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore, 119260
Y. F. Lu
Affiliation:
Laser Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore, 119260
W. D. Song
Affiliation:
Laser Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore, 119260
W. K. Chim
Affiliation:
Laser Microprocessing Laboratory, Department of Electrical Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore, 119260
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Abstract

In this paper, we report our investigation on the kinetics of nanostructure fabrication on gold films and on H-passivated Ge surfaces. The relationship between the current and the tip-sample distance of the STM junction was measured for both gold films and H-passivated Ge surfaces. The tip-sample distance for gold films under a electrochemically etched W tip is approximately 2 nm, while that for H-passivated Ge sufaces is more than 27 nm. The thermal expansion length of the tip under laser irradiation was calculated. From the comparison of the thermal expansion length and the tip-sample distance, we can reach the conclusion that for gold films, thermal mechanical indention is the primary reason of nanostructure formation, while for H-passivated Ge surfaces, optical enhancement is the only reason.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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