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Investigation of Porous Silicon Films Structure by Optical Methods
Published online by Cambridge University Press: 28 February 2011
Abstract
The structure of aged porous silicon (PS) has been investigated using reflectivity, photoluminescence (PL), optical absorption and photoconductivity decay. An optical anisotropy in a perpendicular to surface direction is observed for PS samples below a critical porosity of 70%. The photostability of the PL spectra imply three different structures of PS, these should be attributed to quantum size structures, polymeric type structures and fluor-related structures. The absorption edge is deconvoluted into a band-to-band absorption with energy ranging between Eg = 1.6–2 eV and an absorption shoulder at hu ≤ Eg. The high energy PL band around 2.3 eV resembles that of fluoroindate glass. The observed rapid lifetime at high injection level is attributed to excitonic Auger-type recombination.
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- Copyright © Materials Research Society 1993
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