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Investigation of Near-IR Emission from Hydrogenated Nanocrystalline Silicon – The Oxygen Defect Band

Published online by Cambridge University Press:  01 February 2011

Jeremy David Fields ,
Craig Taylor ,
David Bobela ,
Baojie Yan  and
Guozhen Yue
Jeremy David Fields
Affiliation:
[email protected]@mymail.mines.edu
Craig Taylor
Affiliation:
[email protected], Colorado School of Mines, Physics, Golden, Colorado, United States
David Bobela
Affiliation:
[email protected], National Renewable Energy Laboratory, Golden, Colorado, United States
Baojie Yan
Affiliation:
[email protected], United Solar Ovonic LLC, R&D, Troy, Michigan, United States
Guozhen Yue
Affiliation:
[email protected], United Solar Ovonic LLC, 1100 West Maple Road, Troy, Michigan, 48084, United States, (248) 519-5317, (248) 362-4442
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Abstract

Hydrogenated nanocrystalline silicon (nc-Si:H), a mixture of nanometer sized crystallites and amorphous silicon tissue, demonstrates a photoluminescence band centered at ∼ 0.7 eV, which emerges in response to annealing at an onset temperature of ∼ 200–300 °C. This temperature range correlates well with hydrogen effusion spectroscopy studies, and evidence suggests thermal liberation of hydrogen from grain boundary regions allows oxidation of crystallite surfaces during annealing. We tentatively attribute the 0.7 eV PL in nc-Si:H to deep donor defect states related to oxygen precipitates, and argue for the possible involvement of dislocations inside of crystallites to accompany these precipitates.

Keywords

Siphotoemissiondefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1245: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2010 , 2010 , 1245-A13-01
Copyright
Copyright © Materials Research Society 2010

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