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Investigation of Nano-thin β-SiC Layers for Chemical Sensors

Published online by Cambridge University Press:  01 February 2011

Ronak Rahimi ,
Srikanth Raghavan ,
N.P. Shelton ,
Dinesh Penigalapati ,
Andrew Balling ,
Andrew A. Woodworth ,
Tobias Denig ,
Charter D. Stinespring  and
D. Korakakis
Ronak Rahimi
Affiliation:
[email protected], WVU, Lane Department of Computer Science and Electrical Engineering, PoBox 6109, Morgantown, WV, 26506, United States
Srikanth Raghavan
Affiliation:
[email protected], WVU, Lane Department of Computer Science and Electrical Engineering, PoBox 6109, Morgantown, WV, 26506, United States
N.P. Shelton
Affiliation:
[email protected], WVU, Lane Department of Computer Science and Electrical Engineering, PoBox 6109, Morgantown, WV, 26506, United States
Dinesh Penigalapati
Affiliation:
[email protected], WVU, Lane Department of Computer Science and Electrical Engineering, PoBox 6109, Morgantown, WV, 26506, United States
Andrew Balling
Affiliation:
[email protected], WVU, Lane Department of Computer Science and Electrical Engineering, PoBox 6109, Morgantown, WV, 26506, United States
Andrew A. Woodworth
Affiliation:
[email protected], WVU, Chemical Engineering, PoBox 6102, Morgantown, WV, 26506, United States
Tobias Denig
Affiliation:
[email protected], WVU, Chemical Engineering, PoBox 6102, Morgantown, WV, 26506, United States
Charter D. Stinespring
Affiliation:
[email protected], WVU, Chemical Engineering, PoBox 6102, Morgantown, WV, 26506, United States
D. Korakakis
Affiliation:
[email protected], WVU, Lane Department of Computer Science and Electrical Engineering, PoBox 6109, Morgantown, WV, 26506, United States
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Abstract

Silicon Carbide possesses a combination of properties that make it ideal for use in electronics. Its high values of electric breakdown field, melting point and saturated electron drift velocity have attracted the attention of the semiconductor community. Although the interest in β-SiC/Si devices has intensified in recent years [1-2], little focus has been given to the study of nano-thin film devices. Monocrystalline nano-thin β-SiC films have been reproducibly grown on Si (100) by Gas Source Molecular Beam Epitaxy (GSMBE). Auger Electron Spectroscopy and Reflection High Energy Electron Diffraction characterization have confirmed a growth consistent of β-SiC/Si. Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) characterization has determined film thicknesses of 30nm. These nano-films have been used in the fabrication of Metal-Semiconductor-Metal (MSM) devices formed from aluminum Schottky contacts. Under electrical characterization, these MSM devices have exhibited unique properties in that the dominant conduction path does not occur at the β-SiC/Si interface [3] as previously reported, but within the entire β-SiC layer. It is proposed that the device is isolated from the Silicon substrate and due to the nano-thin β-SiC films used in this work the differentiation between surface and ‘bulk’ is not clear. Results obtained through chemical experimentation have indicated that conduction is largely dependent on the surface condition of the device. This suggests the possibility for nano-thin, surface-like, β-SiC films to be used in chemical agent sensors.

Keywords

sensorthin filmH
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1056: Symposium HH – Nanophase and Nanocomposite Materials V , 2007 , 1056-HH08-05
Copyright
Copyright © Materials Research Society 2008

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References

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