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Investigation of Epitaxial Overgrowth on Germanium Quantum Dots

Published online by Cambridge University Press:  21 March 2011

David W. Greve  and
Qian Zhao
David W. Greve
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA, 15217, U. S. A.
Qian Zhao
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA, 15217, U. S. A.
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Abstract

We report on the characterization of germanium quantum dots grown on silicon (001) substrates by ultra-high vacuum chemical vapor deposition (UHV/CVD). In many applications small and uniform quantum dots are required which must be overgrown by a silicon epitaxial layer. We report here on the effect of carbon predeposition from methylsilane on the dot size and uniformity. In addition, we use reciprocal space mapping to evaluate the qualityof epitaxial layers which overgrow the quantum dots. The results show some differences from previous reports on MBE-grown dots.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 676: Symposium Y – Synthesis, Functional Properties and Applications of Nanostructures , 2001 , Y8.21
Copyright
Copyright © Materials Research Society 2001

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References

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