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Investigation of electric fields, interface charges, and conduction band offsets at ZnSe/GaAs heterojunctions with a novel photoreflectance technique

Published online by Cambridge University Press:  03 September 2012

D. J. Dougherty ,
S.B. Fleischer ,
E. L. Warlick ,
J. L. House ,
G. S. Petrich ,
E. Ho ,
L. A. Kolodziejski  and
E. P. Ippen
D. J. Dougherty
Affiliation:
Research Laboratory of Electronics, MIT 36-325, 50 Vassar St., Cambridge, MA 02139.
S.B. Fleischer
Affiliation:
Research Laboratory of Electronics, MIT 36-325, 50 Vassar St., Cambridge, MA 02139.
E. L. Warlick
Affiliation:
Research Laboratory of Electronics, MIT 36-325, 50 Vassar St., Cambridge, MA 02139.
J. L. House
Affiliation:
Research Laboratory of Electronics, MIT 36-325, 50 Vassar St., Cambridge, MA 02139.
G. S. Petrich
Affiliation:
Research Laboratory of Electronics, MIT 36-325, 50 Vassar St., Cambridge, MA 02139.
E. Ho
Affiliation:
Research Laboratory of Electronics, MIT 36-325, 50 Vassar St., Cambridge, MA 02139.
L. A. Kolodziejski
Affiliation:
Research Laboratory of Electronics, MIT 36-325, 50 Vassar St., Cambridge, MA 02139.
E. P. Ippen
Affiliation:
Research Laboratory of Electronics, MIT 36-325, 50 Vassar St., Cambridge, MA 02139.
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Abstract

ZnSe/GaAs heterojunctions were investigated by contactless electroreflectance and photoreflectance techniques. Negative surface charge densities on the order of 1012 cm-2 were observed for films grown on n-type GaAs indicating a large contribution to the conduction band barrier between the materials due to band bending. The conduction band offset was also measured using a new photoreflectance technique involving a tunable pump laser.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 475
Copyright
Copyright © Materials Research Society 1997

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References

1 Yeganeh, M. S., Qi, J., Yodh, A. G. and Tamargo, M. C., Phys. Rev. Lett., 68, 3761(1992).Google Scholar
2 Bonnani, A., Vanzetti, L., Sorba, L., Franciosi, A., Lomascolo, M., Prete, P. and Cingolani, R., Appl. Phys. Lett., 66, 1092 (1995).Google Scholar
3 Rennie, J., Nishikawa, Y., Saito, S., Onomura, M. and Hatakoshi, G., Appl. Phys. Lett., 68, 2971 (1996).Google Scholar
4 Yin, X., Guo, X.,Pollak, F. H., Pettit, G. D., Woodall, J. M. and Cirlin, Eun-He, SPIE Proceedings, Vol. 1678, 168 (1992).Google Scholar
5 Yow, H. K., Houston, P. A. and Hopkinson, M., Appl. Phy. Lett., 66, 2852 (1995).Google Scholar
6 Pages, O., Renucci, M. A., Briot, O and Aulombard, R. L., J. Appl. Phys 80, 1128 (1996).Google Scholar
7 Ulbrich, R. G., Kash, J. A. and Tsang, J. C., Phys. Rev. Lett., 62, 949 (1989).Google Scholar