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Investigation of Chemical Adsorbate Effects on Blue and Red Emitting Porous Silicon Samples

Published online by Cambridge University Press:  28 February 2011

Julie M. Rehm
Affiliation:
Department of Chemistry, University of Rochester, Rochester, NY 14627
George L. McLendon
Affiliation:
Department of Chemistry, University of Rochester, Rochester, NY 14627
Leonid Tsybeskov
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627
Philippe M. Fauchet
Affiliation:
Department of Electrical Engineering, Laboratory for Laser Energetics, and The Institute of Optics, University of Rochester, Rochester, NY 14627
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Abstract

We have investigated the sensitivity of blue (PLmax = 480 nm) and red (PLmax = 660 nm) emitting porous silicon samples to various chemical adsorbates. Steady-state and time-resolved photoluminescence measurements and FTIR spectroscopy were employed to characterize the photophysical and optical effects induced by chemical exposure. The red samples, which are hydrogen terminated, exhibit quenching and recovery of photoluminescence intensity and broadening of the Si-Hx stretch bands upon exposure to liquid methanol. This behavior is attributed to the ability of the Si-Hx specie on the surface of the PSI to interact with the solvent molecules which temporarily traps the electrons and causes PL loss and Si-Hx broadening. The blue samples, which are oxygen terminated, display similar sensitivity to methanol. This sensitivity is attributed to the solvent's ability to change the surface passivation and thereby introduce competitive radiative and nonradiative recombination channels. The origin of the blue PL is discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1 Canham, L. T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
2 Lauerhaas, J. M., Credo, G. M., Heinrich, J. L. and Sailor, M. J., J. Am. Chem. Soc. 114, 1911 (1992)Google Scholar
3 Lauerhaas, J. M. and Sailor, M. J., Science 261, 1567 (1993)Google Scholar
4 Coffer, J. L., Lilley, S. C., Martin, R. A. and Files-Sesler, L. A., J. Appl. Phys. 74, 2094 (1993).Google Scholar
5 Nash, K. J., Calcott, P. D. J., Canham, L. T., Kane, M. J. and Brumhead, D., J. of Lumin. 60&61, 297 (1994).Google Scholar
6 Koch, F., Mat. Res. Soc. Symp. Proc. 298, 319 (1993).Google Scholar
7 Petrova-Koch, V., Muschik, T., Kux, A., Meyer, B. K., and Koch, F., Appl. Phys. Lett. 61, 943 (1992).Google Scholar
8 Kanemitsu, Y., Masumoto, T., Futagi, T. and Mimura, H., Mat. Res. Soc. Symp. Proc. 298, 205 (1993).Google Scholar
9 Ruter, D., Kunze, T. and Bauhofer, W., Appl. Phys. Lett. 64, 3006 (1994).Google Scholar
10 Wang, X., Shi, G., Zhang, F. L., Chen, H. J., Wang, W., Hao, P. H. and Hou, X. Y., Appl. Phys. Lett. 63, 2363 (1993).Google Scholar
11 Hou, X. Y., Shi, G., Wang, W., Zhang, F. L., Hao, P. H., Huang, D. M. and Wang, X., Appl. Phys. Lett. 62, 1097 (1993).Google Scholar
12 Kanemitsu, Y., Futagi, T., Masumoto, T. and Mimura, H., Phys. Rev. B 49, 14732 (1994).Google Scholar
13 Lee, M. K. and Peng, K. R., Appl. Phys. Lett., 62, 3159 (1993).Google Scholar
14 Tamura, H., Ruckschloss, M., Wirschem, T. and Veprek, S., Appl. Phys. Lett. 65, 1537 (1994).Google Scholar
15 Kontkiewicz, A. J., Kontkiewicz, A. M., Siejka, J., Sen, S., Nowak, G., Hoff, A. M., Sakthivel, P., Ahmed, K., Mukherjee, P., Witanachchi, S. and Lagowski, J., Appl. Phys. Lett. 65, 1436 (1994).Google Scholar
16 Tsybeskov, L., Vandyshev, Ju. and Fauchet, P. M., Phys. Rev. B 49, 7821 (1994).Google Scholar
17 Schultz, J., J. Adhesion 15, 151 (1983).Google Scholar
18 Fojtik, A. and Henglein, A., Chem. Phys. Lett. 221, 363 (1994).Google Scholar
19 Vadjikar, R. M., Jian, B., Gupta, P. K., Nandedkar, R. V., Bhawalkar, D. D., Patni, M. J., Srinivasa, R. and Chandorkar, A. N., Materials Science and Engineering B23, L13 (1994).Google Scholar
20 Rehm, J. M. (unpublished results).Google Scholar
21 Vankateswata Rao, A., Ozanam, F. and -N. Chazalviel, J., J. Electrochem. Soc. 138, 153 (1991).Google Scholar
22 Rehm, J. M., McLendon, G. L. and Fauchet, P. M., Appl. Phys. Lett. (submitted).Google Scholar
23 Canham, L. T., MRS Bulletin 18, 22 (1993).Google Scholar
24 Tsybeskov, L. (unpublished results).Google Scholar