Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-02T21:17:50.543Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of CdZnTe for Thin-Film Tandem Solar Cell Applications

Published online by Cambridge University Press:  01 February 2011

Ramesh Dhere ,
Tim Gessert ,
Jie Zhou ,
Sally Asher ,
Joel Pankow  and
Helio Moutinho
Ramesh Dhere
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401.
Tim Gessert
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401.
Jie Zhou
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401.
Sally Asher
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401.
Joel Pankow
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401.
Helio Moutinho
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401.
Get access

Abstract

Modeling of two-junction tandem devices shows that for optimal device performance, the bandgap of the top cell should be around 1.6-1.8 eV. CdZnTe alloys can be tailored to yield bandgaps in the desired range. In this study, three approaches were used to fabricate these films. The CdTe and ZnTe films were deposited by close-spaced sublimation (CSS) and radio-frequency sputtering (RFS) techniques respectively. In the first approach, we used mixed powders of CdTe and ZnTe as the source for film deposition by CSS. Even for the ZnTe/CdTe (95:5 ratio) source material, the deposited films were entirely CdTe due to higher vapor pressure of CdTe. In the second approach, we used pre-alloyed CdZnTe powders (CERAC, Inc.) as the source. Due to the lower sticking coefficient of Zn, even for the source composition of 75% Zn, these films contained very low quantities of Zn (∼5%). We tried unsuccessfully to increase the Zn content in the films by confining Zn vapor by enclosing the region between the source and substrate, reducing the substrate temperature to 400°C, and adjusting the source/substrate distance. Finally, we used thin-film couples consisting of 300-nm-thick CdTe deposited by CSS and 300-nm-thick ZnTe deposited by RFS; the samples were then heat-treated in cadmium chloride vapor. Compositional analysis of the samples showed extensive interdiffusion of Cd and Zn for the annealed samples. We will present the data on the various stack configurations of CdTe and ZnTe, the effect of different post-deposition anneals, the effect of oxygen on the interdiffusion and alloy formation and its possible correlation to the device performance degradation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B8.25
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Wu, X. et al., Proc. Of 17th European PVSEC, p 995 (2001).Google Scholar
2 Ramanathan, K. et al., to be published in Prog. In Photovoltaics (June, 2003).Google Scholar
3 Coutts, T. et al., Technical Digest of 12th PVSEC, p 277 (2001).Google Scholar
4 McCandless, B., Proc. Of 29th IEEE PVSC, p 488 (2002).Google Scholar
5 Chu, T. et al., J Appl. Phys. 71 (11), p 5635 (1992).Google Scholar