Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-28T04:59:31.270Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigating the Stress and Crystal Quality of AlN Air-Bridges through Micro-Raman Scattering

Published online by Cambridge University Press:  01 February 2011

Sridhar Kuchibhatla ,
L. E. Rodak  and
D. Korakakis
Sridhar Kuchibhatla
Affiliation:
[email protected], West Virginia University, Lane Department of Computer Science and Electrical Engineering, Morgantown, West Virginia, United States
L. E. Rodak
Affiliation:
[email protected], West Virginia University, Lane Department of Computer Science and Electrical Engineering, Morgantown, West Virginia, United States
D. Korakakis
Affiliation:
[email protected], West Virginia University, Lane Department of Computer Science and Electrical Engineering, Morgantown, West Virginia, United States
Get access

Abstract

In this work, we report the post-growth investigation of the microstructure and stress in the AlN films grown on patterned amorphous dielectrics through micro-Raman spectroscopy. The surface texture of AlN/SiO2 structures was characterized by randomly oriented crystallites typical of polycrystalline films. Post growth analysis of the AlN/SiO2 structures using micro Raman spectroscopy did not reveal phonon modes corresponding to wurtzite AlN. The presence of randomly oriented crystallites with a possibility of oxidized Al phase in the AlN film could have suppressed the appearance of wurtzite AlN phonon peaks in the Raman spectrum. Profiling the stress and the microstructure of AlN/SiO2 structures across the width of the bridges is thus limited by these factors. AlN structures on SiO2 when subjected to wet etching in buffered HF (10:1) showed a clear change in texture. Micro-raman spectroscopy on the etched areas revealed wurtzite AlN like phonon modes. The appearance of wurtzite AlN modes can be attributed to the removal of oxidized Al phase in the AlN film after wet etching.

Keywords

Raman spectroscopyIII-Vmicroelectro-mechanical (MEMS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1139: Symposium GG – Microelectromechanical Systems–Materials and Devices II , 2008 , 1139-GG03-46
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERNCES:

1. Cimalla, V, Pezoldt, J and Ambacher, O, J. Phys. D: Appl. Phys. 40, 6386–6434 (2007).Google Scholar
2. Rodak, L. E., Kuchibhatla, Sridhar, Liu, Ting, Famouri, P. and Korakakis, D.; SympQ: Nitrides and Related Bulk Materials, Mater.Res. Soc. Proc. Vol.1040E (Dec –2007).Google Scholar
3. Harima, H., J. Phys.: Condens.Matter. 14 R967–R993 (2002).Google Scholar
4. Lughia, V. and Clarke, D. R., App.Phys. Lett. 89, 241911 (2006).Google Scholar
5. Goni, A. R., Siegle, H., Syassen, K., Thomsen, C., and Wagner, J. M., Phys.Rev. B 64, 035205 (2001).Google Scholar
6. Kuball, M., Hayes, J. M., Prins, A. D., van Uden, N. W. A., Dunstan, D. J., Shi, Y., and Edgar, J. H., Appl. Phys. Lett. 78, 724 (2001).Google Scholar
7. Bungaro, C., Rapcewicz, K., and Bernholc, J., Phys. Rev. B 61, 6720 (2000).Google Scholar
8. Kuball, K., Hayes, J. M., Ying, Shi, and Edgar, J. H., Appl. Phys. Lett. 77, 1958 (2000).Google Scholar
9. Perlin, P., Polian, A., and Suski, T., Phys. Rev. B. 47, 2874 (1993).Google Scholar
10. Berjoan, R., Armas, B., Perarnau, D., J.Phy IV (Colloque), 3, n C3, 171–6 (Aug-1993).Google Scholar
11. Yang, W.S., Kang, S.W., Thin.Solid.Film. 500, 1–2, 231–6 (2006).Google Scholar
12. La Spina, L., Schellevis, H., Nenadovic, N., Nanver, L.K., 25th International Conference on Microelectronics (IEEE Cat.No. 06TH8868), 4pp (2006).Google Scholar