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Inversion of Conductivity in p-Si after Ion Treatment

Published online by Cambridge University Press:  26 February 2011

Alexander N. Buzynin ,
Albert E. Luk–yanov ,
Vyacheslav V. Osiko  and
Vladimir V. Voronkov
Alexander N. Buzynin
Affiliation:
General Physics Institute of RAS, 38 Vavilov Street, Moscow, 117942, Russia
Albert E. Luk–yanov
Affiliation:
General Physics Institute of RAS, 38 Vavilov Street, Moscow, 117942, Russia
Vyacheslav V. Osiko
Affiliation:
General Physics Institute of RAS, 38 Vavilov Street, Moscow, 117942, Russia
Vladimir V. Voronkov
Affiliation:
Institute of Rare Metals, Bolshoi Tolmachevski, 5, Moscow, 109017, Russia
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Abstract

The results of electric parameters studies of silicon samples with unusual p-n junctions are presented. The junctions appeared after the treatment of homogeneous p-Si wafers by 1–5 keV energy argon ion irradiation at the temperature below 100°C and without doping by any n-type impurities. The model of this phenomena is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 653
Copyright
Copyright © Materials Research Society 1995

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References

1. Buzynin, A. N., Luk’yanov, A. E., Butylkina, N. A. et al., Bull. Acad. Sci. USSR Phys. Ser. 54, 96 (1990)Google Scholar
2. Luk–yanov, A. E., Buzynin, A. N., Butylkin, A. I. et al, Scanning. 14, 358 (1992)Google Scholar
3. Voronkov, V. V., Semicond. Sci. Technol. 8, 2037 (1993)Google Scholar