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Intersubband Transitions in In0.3 Ga0.7As/GaAs Multiple Quantum Dots of Varying Dot-Sizes

Published online by Cambridge University Press:  26 February 2011

Y. C. Chua ,
Jie Liang ,
B. S. Passmore ,
E. A. DeCuir ,
M. O. Manasreh ,
Zhiming Wang  and
G. J. Salamo
Y. C. Chua
Affiliation:
Department of Electrical Engineering and Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA
Jie Liang
Affiliation:
Department of Electrical Engineering and Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA
B. S. Passmore
Affiliation:
Department of Electrical Engineering and Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA
E. A. DeCuir
Affiliation:
Department of Electrical Engineering and Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA
M. O. Manasreh
Affiliation:
Department of Electrical Engineering and Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA
Zhiming Wang
Affiliation:
Department of Electrical Engineering and Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA
G. J. Salamo
Affiliation:
Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA
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Abstract

The optical absorption spectra of intersubband transitions in In0.3Ga0.7As/GaAs multiple quantum dots (MQDs) grown by molecular beam epitaxy were investigated. By varying the number of In0.3Ga0.7As monolayers deposited, a series of samples with varying dot sizes ranging from 10 – 50 monolayers were obtained. The quantum dots grown with size less than 15 monolayers or more than 50 monolayers did not yield any observable measurements of intersubband transition. This suggests that there exist a critical upper and lower limit of In0.3Ga0.7As quantum dots for infrared detectors. A wavelength range of 8.60 – 13.70 μm is achieved for structures grown with the above monolayers range. The theoretical line-shape of the intersubband transition absorption was compared to the experimental measurements. From the lineshape, it was deduced that bound-to-continuum transtition is present in thick quantum dots and bound-to-bound transition is present in thinly grown quantum dots.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B1.4
Copyright
Copyright © Materials Research Society 2005

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