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Interpretation of The a-Si:H DLTS and ICTS Experimental Data

Published online by Cambridge University Press:  28 February 2011

Ru-Qi Han ,
K. L. Ngai  and
J. Ruvalds
Ru-Qi Han
Affiliation:
Physics Dept., University of Virginia, Charlottesville, VA 22901
K. L. Ngai
Affiliation:
Naval Research Laboratory, Washington, D. C. 20375-5000
J. Ruvalds
Affiliation:
Physics Dept., University of Virginia, Charlottesville, VA 22901
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Abstract

The isothermal capacitance transient spectroscopy (ICTS) data of a- Si:H is consistently analyzed in terms of a relaxation function with a fractional exponential time decay of the form φ(t)=exp[-(t/τ*)λ] with λ≅0.8. The anomalous variation of the effective relaxation time τ* (and hence that of the attempt-to-escape frequency ν* and the capture cross section σ* observed by Okushi and coworkers) with energy and temperature is shown to follow an additional prediction of the time dependent relaxation rate coupling model developed by Ngai and coworkers for relaxations in many complex systems. A modified energy scale is extended from the ICTS analysis which brings its electronic density of states structure in closer agreement with results obtained by DLTS experiments.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 161
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

[1] Lang, D. V., Cohen, J. D. and Harbison, J. P., Phys. Rev. B 25, 5285 (1982).Google Scholar
[2] Okushi, H., Phil. Mag. B52, 33 (1985) and references cited therein.Google Scholar
[3] LeComber, P. G. and Spear, W. E., Phil. Mag. Lett. B53, L1 (1986). This reference contains a summary of the works in experimental determination of the energies of the gap states.Google Scholar
[4] Kohlrausch, R., Pogg. Ann. Physik, Vol. IV–91, pp. 56–82 and pp. 179–214 (1854).Google Scholar
[5] Ngai, K. L., Comments Solid State Phys. 9, 127 (1979); 9, 144 (1980).Google Scholar
[6] Cohen, M. H. and Grest, G. S., Phys. Rev. B24, 4091 (1981).Google Scholar
[7] Palmer, R. G., Stein, D. L., Abrahams, E. and Anderson, P. W., Phys. Rev. Lett. 53, 958 (1984).Google Scholar
[8] Ngai, K. L., Rajagopal, A. K. and Teitler, S., Physica 133A, 213 (1985).Google Scholar
[9] Rajagopal, A. K., Teitler, S. and Ngai, K. L., J. Phys. C17, 6611 (1984).Google Scholar
[10] For a recent review see Ngai, K. L., Rendell, R. W., Rajagopal, A. K. and Teitler, S., Annals of New York Academy of Sciences (in press).Google Scholar
[11] Murayama, K. and Ninomiya, T., Jpn. J. Appl. Phys., 21, L512 (1982).Google Scholar
[12] Du, Y. et al, J. Electronics (Chinese) 6, 417 (1984).Google Scholar