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Intermetallic Reactions Between Copper and Magnesium as an Adhesion / Barrier Layer

Published online by Cambridge University Press:  15 February 2011

Binny Arcot ,
C. Cabral Jr. ,
J. M. E. Harper  and
S. P. Murarka
Binny Arcot
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180
C. Cabral Jr.
Affiliation:
IBM T.J Watson Research Center, Yorktown Heights, NY 10598
J. M. E. Harper
Affiliation:
IBM T.J Watson Research Center, Yorktown Heights, NY 10598
S. P. Murarka
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

The reliability of copper multilevel interconnections requires good adhesion and the prevention of copper diffusion into the interlevel dielectric. Magnesium is a candidate for an adhesion layer and diffusion barrier for copper due to the high heats of formation of magnesium oxides, fluorides and sulfides and the formation of low resistivity compounds of Mg with copper. An investigation of the interactions in thin films of copper and magnesium has been carried out in the temperature range of 25°C to 500°C. The results of these reactions leading to phase formation in Cu/Mg bilayers deposited on Si3N4 or SiO2 using X-ray diffraction, in situ sheet resistance, and Rutherford backscattering measurements are presented in this paper. It was found that the Mg-rich phase CuMg2 is the first phase to form on annealing to approximately 215°C, followed by the formation of the Cu-rich phase Cu2Mg at about 380°C in the presence of excess Cu.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 231
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Kubaschewski, O., Evans, E. L L. and Alcock, C. B. in Metallurgical Thermochemistry. Pergamon Press. NY. 332 (1967)Google Scholar
2. Arcot, B., Shy, Y.T. and Murarka, S.P. in Proceedings of the Fail 1990 Materials Research Society Conference, Nov. 26. 1990, Boston MA.Google Scholar
3. Hansen, M. and Anderko, K. in Constitution of Binary Alloys, McGraw Hil, NY, 594 (1958)Google Scholar
4. Schroeder, K. in Handbook of Electrical Resistivities of Binary Metallic Alloys, CRC Press 219 (1983)Google Scholar
5. Kissinger, H. E., J. Res. Nati. Bur. Stds. 57. no. 4, 217 (1956)Google Scholar
6. Modestov, A. D. and Astakhov, I. I., Sov. Electrochem. (USA). 19, 1 (1983)Google Scholar