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Interfacial Strain Reliefs in Epitaxial YBa2Cu3O7–δ Thin Films Grown on SrTiO3 Buffered MGO Substrates

Published online by Cambridge University Press:  10 February 2011

Xingtian Cui ,
Q. Y Chen ,
Yongxiang Guo  and
W. K. Chu
Xingtian Cui
Affiliation:
Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, TX 77204 Metals & Ceramics Div., ORNL, MS6116, Oak Ridge, TN37831
Q. Y Chen
Affiliation:
Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, TX 77204
Yongxiang Guo
Affiliation:
Department of Earth and Planetary Sciences, The University of New Mexico, Albuquerque, NM 87131
W. K. Chu
Affiliation:
Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, TX 77204
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Abstract

High quality YBa2Cu3O7–δ, (YBCO) epitaxial thin films grown on MgO substrate with a strainrelieved SrTiO3 (STO) buffer layer have been investigated by Rutherford backscattering spectrometry (RBS), ion channeling and high resolution cross sectional transmission electron microscopy (XTEM). The in-situ growth of STO buffer layer along with the YBCO films was carried out by pulsed laser ablation. In this work, minimum yield of channeling measurements have shown that a very thin STO buffer layer is sufficient to grow highly crystalline YBCO thin films on MgO substrates. TEM studies showed that the STO layers were strain-relieved by an array of periodic edge dislocations. The YBCO films on STO buffer, as in those grown directly on an STO substrate, evolved from a strained layer to a largely dislocation free area.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 505 , 1997 , 439
Copyright
Copyright © Materials Research Society 1998

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References

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