Hostname: page-component-745bb68f8f-grxwn Total loading time: 0 Render date: 2025-01-27T16:08:49.206Z Has data issue: false hasContentIssue false
  • English
  • Français

Interfacial Reactions in Titanium - Silicon Multilayers

Published online by Cambridge University Press:  26 February 2011

Karen Holloway  and
Robert Sinclair
Karen Holloway
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
Robert Sinclair
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
Get access

Abstract

We have used cross-section and through-foil TEM, RBS, and x-ray diffraction to investigate reactions upon rapid thermal annealing of sputtered Ti-Si multilayers of various compositions and bilayer spacings. This study addresses the behavior of the Ti-Si interface at low annealing temperatures (T< 600δC) to determine the extent to which interdiffusion occurs prior to suicide formation, and to detect the formation of the first suicide at an early stage. Whereas most previous work studied a single Ti-Si interface, we have used multilayer films because a reaction occurs at many interfaces, allowing detection of a phase even if it is formed to a very limited extent.

The silicon layers in the as-deposited films are amorphous; the titanium layers are polycrystalline hep. The compositions of the samples are 40 at.% Ti, 60 at.% Si and 60 at.% Ti, 40 aL% Si, and the bilayer periodicity is about 10 nm. After a 30 second anneal at 455°C, significant interdiffusion occurs and we observed the formation of an amorphous Ti-Si alloy by interfacial reaction. The metastable disilicide, C49 TiSi2, nucleated along with a small amount of TiSi in the sample with higher silicon content (60%) upon annealing at 550°C for 10 seconds, but the amorphous alloy remained as the only product of reaction in the 40 at. % Si sample. Cross-section TEM of a sample fabricated at 60°C suggests that interdiffusion had begun during deposition of the films.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 357
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Beyers, R. and Sinclair, R., J. Appl. Phys. 57, 5240 (1985).CrossRefGoogle Scholar
2. Nemanich, R.J., Fulks, R.T., Stafford, B.L., and Vander Plas, H.A., Appl. Phys. Lett. 46, 670 (1985).CrossRefGoogle Scholar
3. Butz, R., Rubloff, G.W., Tan, T.Y., and Ho, P.S., Phys. Rev. B 30, 5421 (1984).CrossRefGoogle Scholar
4. Rubloff, G.W., Tromp, R.M., and van Loenen, E.J., Appl. Phys. Lett. 48, 1600 (1986)CrossRefGoogle Scholar
5. Tromp, R.M., Rubloff, G.W., and van Leonen, E.J., J. Vac. Sci. Technol. A 4 (3), 865 (1986)CrossRefGoogle Scholar
6. Barbee, T. and Keith, D.L., in Synthesis and Properties ofMetastable Phases, edited by Machlin, E.S. and Rowland, T.J. (AIME, New York, 1980), p.93.Google Scholar
7. Bravman, J.C. and Sinclair, R., J. Electron Microsc. Technique 1, 53 (1984).CrossRefGoogle Scholar
8. Helmersson, U. and Sundgren, J., J. Electron Microsc. Technique, in press.Google Scholar
9. Holloway, K. and Sinclair, R., J. Appl. Phys., in press.Google Scholar
10. van Loenen, E.J., Fischer, A.E.M.J. and van der Veen, J.F., Surf. Sci. 155, 65 (1985)CrossRefGoogle Scholar
11. del Giudice, M., Joyce, J.J., Ruckman, M.W., and Weaver, J.H., Phys. Rev. B, in press.Google Scholar
12. Murarka, S.P., J. Vac. Sci. Technol. 17, 775 (1980).CrossRefGoogle Scholar
13. Schwarz, R.B. and Johnson, W.L., Phys. Rev. Lett. 51, 415 (1983).CrossRefGoogle Scholar
14. Schwarz, R.B., Wong, K.L., and Johnson, W.L., J. Non Cryst. Solids 61&62, 129 (1984).CrossRefGoogle Scholar
15. Clemens, B.M., J. Non Cryst. Solids 61&62, 817 (1984).CrossRefGoogle Scholar
16. Clemens, B.M. and Suchoski, M.J., Appl. Phys. Lett. 47, 943 (1985).CrossRefGoogle Scholar
17. Herd, S., Tu, K.N., and Ahn, K.Y., Appl. Phys. Lett. 42, 599 (1983).CrossRefGoogle Scholar
18. Vanderwalker, D.M., Appl. Phys. Lett. 48, 707 (1986)CrossRefGoogle Scholar
19. Cowley, J.M., Acta Cryst. A29, 529 (1973)CrossRefGoogle Scholar