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Interfacial Reaction Between a Sputter Deposited MoSi2 Film and its Oxidation Product on Al2O3 at 1300°C in Air.

Published online by Cambridge University Press:  15 February 2011

P.K. Wu ,
L.E. Kolaya ,
D.J. Duquette  and
J.B. Hudson
P.K. Wu
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180.
L.E. Kolaya
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180.
D.J. Duquette
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180.
J.B. Hudson
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180.
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Abstract

The chemical compatibility between MoSi2 and Al2O3 at 1300° C was examined using sputter deposited MoSi2 films, 0.7 μm thick, on sapphire and on polycrystalline alumina. The oxidation behavior of the sputter deposited films was found to be identical to that of bulk MoSi2. The oxidation products of the MoSi2 are Si oxides and lower suicides of Mo. MoO3 is formed and sublimes at the free surface. Oxidation is found to occur at the SiO2/MoSi2 interface. Just beneath this interface, suicides of mo and two oxidation states of Si were identified. No reaction between MoSi2 and alumina was found. In the case of a sapphire substrate, after mo was completely eliminated from the interface, silica reacted with the substrate and eventually phase separated into high- and low-silica phases. Nucleation, growth and coalescence of high-silica precipitates were observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 559
Copyright
Copyright © Materials Research Society 1994

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References

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