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Interfacial Phenomena Affecting Charge Transport In Small Molecule Organic Thin-Film Transistors

Published online by Cambridge University Press:  26 February 2011

Antonio Facchetti ,
Choongik Kim ,
Myung-han Yoon  and
Tobin J Marks
Antonio Facchetti
Affiliation:
[email protected], Northwestern University, Chemistry, 2145 Sheridan Road, Evanston, IL, 60208, United States, 847 4913295
Choongik Kim
Affiliation:
[email protected], Northwestern University, Department of Chemistry, 2145 Sheridan Road, Evanston, IL, 60208, United States
Myung-han Yoon
Affiliation:
[email protected], Northwestern University, Department of Chemistry, 2145 Sheridan Road, Evanston, IL, 60208, United States
Tobin J Marks
Affiliation:
[email protected], Northwestern University, Department of Chemistry, 2145 Sheridan Road, Evanston, IL, 60208, United States
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Abstract

Organic semiconductors exhibiting p-, n-type, or ambipolar majority charge transport are grown on six different bilayer dielectric structures consisting of various spin-coated polymers / HMDS on 300 nm SiO2/p+-Si, and are characterized by AFM, SEM, and WAXRD, followed by field-effect transistor (FET) electrical characterization. It is observed that in case of air-sensitive n-type semiconductors, dielectric surface modifications induce large variations in the corresponding OTFT performance parameters although the film morphologies and microstructures remain similar. In marked contrast, the device performance of air-stable n-type and p-type semiconductors is not significantly affected by the same dielectric surface modifications. This study provides key information on the chemical origin of the charge trapping sites at the FET dielectric-semiconductor interface. In parallel, bottom-contact FETs of n-type oligothiophenes were investigated by a combination of microscopy/electrical measurements and new insights for the poor electron injection efficiency from the Au contacts are presented

Keywords

semiconductingdielectricthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 965: Symposium S – Organic Electronics – Materials, Devices and Applications , 2006 , 0965-S07-05
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

[1] Dimitrakopoulos, D., Malenfant, P. R. L., Adv. Mater. 14, 99, (2002).Google Scholar
[2] Facchetti, A., Yoon, M.-H., Marks, T. J., Adv. Mater. 17, 1705, (2005).Google Scholar
[3] Fritz, S. E., Kelly, T. W., Frisbie, C. D., J. Phys. Chem. B 109, 10574, (2005).Google Scholar
[4] Yoon, M.-Y., Kim, C. S., Facchetti, A., Marks, T. J., J. Am. Chem. Soc., 2006, 128, 12851 Google Scholar